Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Memory devices are key building blocks of image sensing circuitry. Here, the authors demonstrate a MoS2monolayer optoelectronic memory device based on charge trapping and subsequent optically-induced charge release, capable of 12-bit operation.

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Detalles Bibliográficos
Autores principales: Juwon Lee, Sangyeon Pak, Young-Woo Lee, Yuljae Cho, John Hong, Paul Giraud, Hyeon Suk Shin, Stephen M. Morris, Jung Inn Sohn, SeungNam Cha, Jong Min Kim
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Science
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Acceso en línea:https://doaj.org/article/00167e5f1ab746d8afd521e4f4758feb
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