Monolayer optical memory cells based on artificial trap-mediated charge storage and release
Memory devices are key building blocks of image sensing circuitry. Here, the authors demonstrate a MoS2monolayer optoelectronic memory device based on charge trapping and subsequent optically-induced charge release, capable of 12-bit operation.
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| Autores principales: | , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/00167e5f1ab746d8afd521e4f4758feb |
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