Monolayer optical memory cells based on artificial trap-mediated charge storage and release
Memory devices are key building blocks of image sensing circuitry. Here, the authors demonstrate a MoS2monolayer optoelectronic memory device based on charge trapping and subsequent optically-induced charge release, capable of 12-bit operation.
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2017
|
| Subjects: | |
| Online Access: | https://doaj.org/article/00167e5f1ab746d8afd521e4f4758feb |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!