Two-component anomalous Hall effect in a magnetically doped topological insulator

The anomalous Hall (AH) effect in magnetically doped topological insulator has been elusive. Here, Liu et al. observe that the AH resistance changes sign in the Mn doped Bi2Se3 thin films, where bulk (surface) states contribute to positive (negative) AH components dominantly.

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Autores principales: Nan Liu, Jing Teng, Yongqing Li
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Q
Acceso en línea:https://doaj.org/article/002282c5bc5a4d09b870ebd33f910c64
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