Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits

Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application...

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Autores principales:	Rixuan Wang, Joonjung Lee, Jisu Hong, Hyeok-jin Kwon, Heqing Ye, Juhyun Park, Chan Eon Park, Joon Ho Kim, Hyun Ho Choi, Kyuyoung Eom, Se Hyun Kim
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	organic field-effect transistor gate dielectric polyimide integrated logic gates Organic chemistry QD241-441
Acceso en línea:	https://doaj.org/article/00be25abc4464ac9ab27bbc1342befb1
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spelling	oai:doaj.org-article:00be25abc4464ac9ab27bbc1342befb12021-11-11T18:44:44ZMass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits10.3390/polym132137152073-4360https://doaj.org/article/00be25abc4464ac9ab27bbc1342befb12021-10-01T00:00:00Zhttps://www.mdpi.com/2073-4360/13/21/3715https://doaj.org/toc/2073-4360Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application value is limitless. Herein, we synthesized a typical poly(amic acid) (PAA) precursor-based solution through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI using thermal imidization. The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. Utilizing this PI layer, we were able to fabricate electrically stable operated OFETs, which exhibited a threshold voltage shift lower than 1 V under bias-stress conditions and a field-effect mobility of 4.29 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. Moreover, integrated logic gates were manufactured using these well-operated OFETs and displayed suitable operation behavior.Rixuan WangJoonjung LeeJisu HongHyeok-jin KwonHeqing YeJuhyun ParkChan Eon ParkJoon Ho KimHyun Ho ChoiKyuyoung EomSe Hyun KimMDPI AGarticleorganic field-effect transistorgate dielectricpolyimideintegrated logic gatesOrganic chemistryQD241-441ENPolymers, Vol 13, Iss 3715, p 3715 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	organic field-effect transistor gate dielectric polyimide integrated logic gates Organic chemistry QD241-441
spellingShingle	organic field-effect transistor gate dielectric polyimide integrated logic gates Organic chemistry QD241-441 Rixuan Wang Joonjung Lee Jisu Hong Hyeok-jin Kwon Heqing Ye Juhyun Park Chan Eon Park Joon Ho Kim Hyun Ho Choi Kyuyoung Eom Se Hyun Kim Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits
description	Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application value is limitless. Herein, we synthesized a typical poly(amic acid) (PAA) precursor-based solution through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI using thermal imidization. The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. Utilizing this PI layer, we were able to fabricate electrically stable operated OFETs, which exhibited a threshold voltage shift lower than 1 V under bias-stress conditions and a field-effect mobility of 4.29 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. Moreover, integrated logic gates were manufactured using these well-operated OFETs and displayed suitable operation behavior.
format	article
author	Rixuan Wang Joonjung Lee Jisu Hong Hyeok-jin Kwon Heqing Ye Juhyun Park Chan Eon Park Joon Ho Kim Hyun Ho Choi Kyuyoung Eom Se Hyun Kim
author_facet	Rixuan Wang Joonjung Lee Jisu Hong Hyeok-jin Kwon Heqing Ye Juhyun Park Chan Eon Park Joon Ho Kim Hyun Ho Choi Kyuyoung Eom Se Hyun Kim
author_sort	Rixuan Wang
title	Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits
title_short	Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits
title_full	Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits
title_fullStr	Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits
title_full_unstemmed	Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits
title_sort	mass-synthesized solution-processable polyimide gate dielectrics for electrically stable operating ofets and integrated circuits
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/00be25abc4464ac9ab27bbc1342befb1
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_version_	1718431683324149760

Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits

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