Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films

Spintronic devices are typically controlled with magnetic fields or current injection but incorporating these mechanisms into high-density devices is difficult. Here the authors present an oxide device where the topological and anomalous Hall effects can instead be modulated using an electric field.

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Autores principales: Yuki Ohuchi, Jobu Matsuno, Naoki Ogawa, Yusuke Kozuka, Masaki Uchida, Yoshinori Tokura, Masashi Kawasaki
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/019945e80fba4107ab77fe1b4c45400a
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Sumario:Spintronic devices are typically controlled with magnetic fields or current injection but incorporating these mechanisms into high-density devices is difficult. Here the authors present an oxide device where the topological and anomalous Hall effects can instead be modulated using an electric field.