Valence band engineering of GaAsBi for low noise avalanche photodiodes

An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs) avalanche photodiodes significantly reduces t...

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Autores principales:	Yuchen Liu, Xin Yi, Nicholas J. Bailey, Zhize Zhou, Thomas B. O. Rockett, Leh W. Lim, Chee H. Tan, Robert D. Richards, John P. R. David
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/01c74c96825d42328ebb577ad34efec4
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spelling	oai:doaj.org-article:01c74c96825d42328ebb577ad34efec42021-12-02T18:49:37ZValence band engineering of GaAsBi for low noise avalanche photodiodes10.1038/s41467-021-24966-02041-1723https://doaj.org/article/01c74c96825d42328ebb577ad34efec42021-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-24966-0https://doaj.org/toc/2041-1723An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs) avalanche photodiodes significantly reduces this excess noise.Yuchen LiuXin YiNicholas J. BaileyZhize ZhouThomas B. O. RockettLeh W. LimChee H. TanRobert D. RichardsJohn P. R. DavidNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Yuchen Liu Xin Yi Nicholas J. Bailey Zhize Zhou Thomas B. O. Rockett Leh W. Lim Chee H. Tan Robert D. Richards John P. R. David Valence band engineering of GaAsBi for low noise avalanche photodiodes
description	An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs) avalanche photodiodes significantly reduces this excess noise.
format	article
author	Yuchen Liu Xin Yi Nicholas J. Bailey Zhize Zhou Thomas B. O. Rockett Leh W. Lim Chee H. Tan Robert D. Richards John P. R. David
author_facet	Yuchen Liu Xin Yi Nicholas J. Bailey Zhize Zhou Thomas B. O. Rockett Leh W. Lim Chee H. Tan Robert D. Richards John P. R. David
author_sort	Yuchen Liu
title	Valence band engineering of GaAsBi for low noise avalanche photodiodes
title_short	Valence band engineering of GaAsBi for low noise avalanche photodiodes
title_full	Valence band engineering of GaAsBi for low noise avalanche photodiodes
title_fullStr	Valence band engineering of GaAsBi for low noise avalanche photodiodes
title_full_unstemmed	Valence band engineering of GaAsBi for low noise avalanche photodiodes
title_sort	valence band engineering of gaasbi for low noise avalanche photodiodes
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/01c74c96825d42328ebb577ad34efec4
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Valence band engineering of GaAsBi for low noise avalanche photodiodes

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