Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

Anion vacancies are a hurdle for technologies based on chalcogenide semiconductors and topological insulators. Even at room temperature, oxidation and cyanide etching can lead to selenium vacancies in CuInSe2 photovoltaic material but suitable post deposition treatments can mitigate their effect.

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Detalles Bibliográficos
Autores principales: Diego Colombara, Hossam Elanzeery, Nicoleta Nicoara, Deepanjan Sharma, Marcel Claro, Torsten Schwarz, Anna Koprek, Max Hilaire Wolter, Michele Melchiorre, Mohit Sood, Nathalie Valle, Oleksandr Bondarchuk, Finn Babbe, Conrad Spindler, Oana Cojocaru-Miredin, Dierk Raabe, Phillip J. Dale, Sascha Sadewasser, Susanne Siebentritt
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Science
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Acceso en línea:https://doaj.org/article/0226f4669b2b4f8287fc6607b094f0aa
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Descripción
Sumario:Anion vacancies are a hurdle for technologies based on chalcogenide semiconductors and topological insulators. Even at room temperature, oxidation and cyanide etching can lead to selenium vacancies in CuInSe2 photovoltaic material but suitable post deposition treatments can mitigate their effect.

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