Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

Anion vacancies are a hurdle for technologies based on chalcogenide semiconductors and topological insulators. Even at room temperature, oxidation and cyanide etching can lead to selenium vacancies in CuInSe2 photovoltaic material but suitable post deposition treatments can mitigate their effect.

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Autores principales: Diego Colombara, Hossam Elanzeery, Nicoleta Nicoara, Deepanjan Sharma, Marcel Claro, Torsten Schwarz, Anna Koprek, Max Hilaire Wolter, Michele Melchiorre, Mohit Sood, Nathalie Valle, Oleksandr Bondarchuk, Finn Babbe, Conrad Spindler, Oana Cojocaru-Miredin, Dierk Raabe, Phillip J. Dale, Sascha Sadewasser, Susanne Siebentritt
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Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/0226f4669b2b4f8287fc6607b094f0aa
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spelling oai:doaj.org-article:0226f4669b2b4f8287fc6607b094f0aa2021-12-02T16:17:57ZChemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface10.1038/s41467-020-17434-82041-1723https://doaj.org/article/0226f4669b2b4f8287fc6607b094f0aa2020-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-17434-8https://doaj.org/toc/2041-1723Anion vacancies are a hurdle for technologies based on chalcogenide semiconductors and topological insulators. Even at room temperature, oxidation and cyanide etching can lead to selenium vacancies in CuInSe2 photovoltaic material but suitable post deposition treatments can mitigate their effect.Diego ColombaraHossam ElanzeeryNicoleta NicoaraDeepanjan SharmaMarcel ClaroTorsten SchwarzAnna KoprekMax Hilaire WolterMichele MelchiorreMohit SoodNathalie ValleOleksandr BondarchukFinn BabbeConrad SpindlerOana Cojocaru-MiredinDierk RaabePhillip J. DaleSascha SadewasserSusanne SiebentrittNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-14 (2020)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Diego Colombara
Hossam Elanzeery
Nicoleta Nicoara
Deepanjan Sharma
Marcel Claro
Torsten Schwarz
Anna Koprek
Max Hilaire Wolter
Michele Melchiorre
Mohit Sood
Nathalie Valle
Oleksandr Bondarchuk
Finn Babbe
Conrad Spindler
Oana Cojocaru-Miredin
Dierk Raabe
Phillip J. Dale
Sascha Sadewasser
Susanne Siebentritt
Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
description Anion vacancies are a hurdle for technologies based on chalcogenide semiconductors and topological insulators. Even at room temperature, oxidation and cyanide etching can lead to selenium vacancies in CuInSe2 photovoltaic material but suitable post deposition treatments can mitigate their effect.
format article
author Diego Colombara
Hossam Elanzeery
Nicoleta Nicoara
Deepanjan Sharma
Marcel Claro
Torsten Schwarz
Anna Koprek
Max Hilaire Wolter
Michele Melchiorre
Mohit Sood
Nathalie Valle
Oleksandr Bondarchuk
Finn Babbe
Conrad Spindler
Oana Cojocaru-Miredin
Dierk Raabe
Phillip J. Dale
Sascha Sadewasser
Susanne Siebentritt
author_facet Diego Colombara
Hossam Elanzeery
Nicoleta Nicoara
Deepanjan Sharma
Marcel Claro
Torsten Schwarz
Anna Koprek
Max Hilaire Wolter
Michele Melchiorre
Mohit Sood
Nathalie Valle
Oleksandr Bondarchuk
Finn Babbe
Conrad Spindler
Oana Cojocaru-Miredin
Dierk Raabe
Phillip J. Dale
Sascha Sadewasser
Susanne Siebentritt
author_sort Diego Colombara
title Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
title_short Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
title_full Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
title_fullStr Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
title_full_unstemmed Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
title_sort chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/0226f4669b2b4f8287fc6607b094f0aa
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