Micro-raman spectra of Ge–As–Se chalcogenide amorphous powders
Analysis of the Micro-Raman spectra of GexAsxSe1–2x (x = 0.05–0.30) amorphous chalcogenide glasses are reported. The Micro-Raman spectra exhibit three main peaks located at about V= 193, 213, and 255 cm–1. The peaks at around V = 193 and 213 cm–1 can be attributed to the vibrations of GeSe bonds. Th...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/0321fcd57b1d4b9b8cdbb517166c0bed |
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| Sumario: | Analysis of the Micro-Raman spectra of GexAsxSe1–2x (x = 0.05–0.30) amorphous chalcogenide glasses are reported. The Micro-Raman spectra exhibit three main peaks located at about V= 193, 213, and 255 cm–1. The peaks at around V = 193 and 213 cm–1 can be attributed to the vibrations of GeSe bonds. The presence of the Raman peak at about V = 255 cm–1 is attributed to the bond-stretching vibrations of the disordered Se chains and rings. With an increase in the Ge concentration, this peak is shifted to a higher wavenumber due to the shortening of the Se chains. The peak at about V = 300 cm–1 is characteristic of the Ge–Ge vibration mode. It is found that the different Ge concentrations slightly change the shape of the Micro-Raman spectra, mainly the intensity ratio. |
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