Micro-raman spectra of Ge–As–Se chalcogenide amorphous powders

Analysis of the Micro-Raman spectra of GexAsxSe1–2x (x = 0.05–0.30) amorphous chalcogenide glasses are reported. The Micro-Raman spectra exhibit three main peaks located at about V= 193, 213, and 255 cm–1. The peaks at around V = 193 and 213 cm–1 can be attributed to the vibrations of GeSe bonds. Th...

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Autores principales:	Iaseniuc, Oxana, Iovu, Mihail, Ghiulnare, A., Mesterca, Raluca, Jderu, Alin Alexandru, Enăchescu, Marius
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2018
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/0321fcd57b1d4b9b8cdbb517166c0bed
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id	oai:doaj.org-article:0321fcd57b1d4b9b8cdbb517166c0bed
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spelling	oai:doaj.org-article:0321fcd57b1d4b9b8cdbb517166c0bed2021-11-21T11:56:10ZMicro-raman spectra of Ge–As–Se chalcogenide amorphous powders538.9+539.22537-63651810-648Xhttps://doaj.org/article/0321fcd57b1d4b9b8cdbb517166c0bed2018-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2018/article/71375https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Analysis of the Micro-Raman spectra of GexAsxSe1–2x (x = 0.05–0.30) amorphous chalcogenide glasses are reported. The Micro-Raman spectra exhibit three main peaks located at about V= 193, 213, and 255 cm–1. The peaks at around V = 193 and 213 cm–1 can be attributed to the vibrations of GeSe bonds. The presence of the Raman peak at about V = 255 cm–1 is attributed to the bond-stretching vibrations of the disordered Se chains and rings. With an increase in the Ge concentration, this peak is shifted to a higher wavenumber due to the shortening of the Se chains. The peak at about V = 300 cm–1 is characteristic of the Ge–Ge vibration mode. It is found that the different Ge concentrations slightly change the shape of the Micro-Raman spectra, mainly the intensity ratio.Iaseniuc, OxanaIovu, MihailGhiulnare, A.Mesterca, RalucaJderu, Alin AlexandruEnăchescu, MariusD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 17, Iss 3-4, Pp 161-166 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Iaseniuc, Oxana Iovu, Mihail Ghiulnare, A. Mesterca, Raluca Jderu, Alin Alexandru Enăchescu, Marius Micro-raman spectra of Ge–As–Se chalcogenide amorphous powders
description	Analysis of the Micro-Raman spectra of GexAsxSe1–2x (x = 0.05–0.30) amorphous chalcogenide glasses are reported. The Micro-Raman spectra exhibit three main peaks located at about V= 193, 213, and 255 cm–1. The peaks at around V = 193 and 213 cm–1 can be attributed to the vibrations of GeSe bonds. The presence of the Raman peak at about V = 255 cm–1 is attributed to the bond-stretching vibrations of the disordered Se chains and rings. With an increase in the Ge concentration, this peak is shifted to a higher wavenumber due to the shortening of the Se chains. The peak at about V = 300 cm–1 is characteristic of the Ge–Ge vibration mode. It is found that the different Ge concentrations slightly change the shape of the Micro-Raman spectra, mainly the intensity ratio.
format	article
author	Iaseniuc, Oxana Iovu, Mihail Ghiulnare, A. Mesterca, Raluca Jderu, Alin Alexandru Enăchescu, Marius
author_facet	Iaseniuc, Oxana Iovu, Mihail Ghiulnare, A. Mesterca, Raluca Jderu, Alin Alexandru Enăchescu, Marius
author_sort	Iaseniuc, Oxana
title	Micro-raman spectra of Ge–As–Se chalcogenide amorphous powders
title_short	Micro-raman spectra of Ge–As–Se chalcogenide amorphous powders
title_full	Micro-raman spectra of Ge–As–Se chalcogenide amorphous powders
title_fullStr	Micro-raman spectra of Ge–As–Se chalcogenide amorphous powders
title_full_unstemmed	Micro-raman spectra of Ge–As–Se chalcogenide amorphous powders
title_sort	micro-raman spectra of ge–as–se chalcogenide amorphous powders
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2018
url	https://doaj.org/article/0321fcd57b1d4b9b8cdbb517166c0bed
work_keys_str_mv	AT iaseniucoxana microramanspectraofgeassechalcogenideamorphouspowders AT iovumihail microramanspectraofgeassechalcogenideamorphouspowders AT ghiulnarea microramanspectraofgeassechalcogenideamorphouspowders AT mestercaraluca microramanspectraofgeassechalcogenideamorphouspowders AT jderualinalexandru microramanspectraofgeassechalcogenideamorphouspowders AT enachescumarius microramanspectraofgeassechalcogenideamorphouspowders
_version_	1718419343056830464

Micro-raman spectra of Ge–As–Se chalcogenide amorphous powders

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