Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching

Abstract The nitrogen-vacancy (NV) centre in diamond is a promising candidate for quantum computing applications and magnetic sensing applications, because it is an atomic-scale defect with stable coherence time (T 2) and reliable accessibility at room temperature. We demonstrated a method for impro...

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Autores principales:	F. Brandenburg, R. Nagumo, K. Saichi, K. Tahara, T. Iwasaki, M. Hatano, F. Jelezko, R. Igarashi, T. Yatsui
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Nitrogen Vacancies (NV) NV Centre Electron Spin Properties FWHM Value Nanodiamond Surface Medicine R Science Q
Acceso en línea:	https://doaj.org/article/033511b1bdf647f5ab90c15732d1633e
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spelling	oai:doaj.org-article:033511b1bdf647f5ab90c15732d1633e2021-12-02T15:08:27ZImproving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching10.1038/s41598-018-34158-42045-2322https://doaj.org/article/033511b1bdf647f5ab90c15732d1633e2018-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-34158-4https://doaj.org/toc/2045-2322Abstract The nitrogen-vacancy (NV) centre in diamond is a promising candidate for quantum computing applications and magnetic sensing applications, because it is an atomic-scale defect with stable coherence time (T 2) and reliable accessibility at room temperature. We demonstrated a method for improving the NV spin properties (the full width half maximum (FWHM) value of the magnetic resonance spectrum and T 2) through a near-field (NF) etching method under ambient conditions. The NF etching method, based on a He-Cd ultraviolet laser (325 nm), which is longer than the absorption edge of the oxygen molecule, enabled selective removal of defects on the nanodiamond surface. We observed a decrease in the FWHM value close to 15% and an increase in T 2 close to 25%. Since our technique can be easily reproduced, a wide range of NV centre applications could be improved, especially magnetic sensing applications. Our results are especially attractive, because they have been obtained under ambient conditions and only require a light source with wavelength slightly above the O2 absorption edge.F. BrandenburgR. NagumoK. SaichiK. TaharaT. IwasakiM. HatanoF. JelezkoR. IgarashiT. YatsuiNature PortfolioarticleNitrogen Vacancies (NV)NV CentreElectron Spin PropertiesFWHM ValueNanodiamond SurfaceMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Nitrogen Vacancies (NV) NV Centre Electron Spin Properties FWHM Value Nanodiamond Surface Medicine R Science Q
spellingShingle	Nitrogen Vacancies (NV) NV Centre Electron Spin Properties FWHM Value Nanodiamond Surface Medicine R Science Q F. Brandenburg R. Nagumo K. Saichi K. Tahara T. Iwasaki M. Hatano F. Jelezko R. Igarashi T. Yatsui Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching
description	Abstract The nitrogen-vacancy (NV) centre in diamond is a promising candidate for quantum computing applications and magnetic sensing applications, because it is an atomic-scale defect with stable coherence time (T 2) and reliable accessibility at room temperature. We demonstrated a method for improving the NV spin properties (the full width half maximum (FWHM) value of the magnetic resonance spectrum and T 2) through a near-field (NF) etching method under ambient conditions. The NF etching method, based on a He-Cd ultraviolet laser (325 nm), which is longer than the absorption edge of the oxygen molecule, enabled selective removal of defects on the nanodiamond surface. We observed a decrease in the FWHM value close to 15% and an increase in T 2 close to 25%. Since our technique can be easily reproduced, a wide range of NV centre applications could be improved, especially magnetic sensing applications. Our results are especially attractive, because they have been obtained under ambient conditions and only require a light source with wavelength slightly above the O2 absorption edge.
format	article
author	F. Brandenburg R. Nagumo K. Saichi K. Tahara T. Iwasaki M. Hatano F. Jelezko R. Igarashi T. Yatsui
author_facet	F. Brandenburg R. Nagumo K. Saichi K. Tahara T. Iwasaki M. Hatano F. Jelezko R. Igarashi T. Yatsui
author_sort	F. Brandenburg
title	Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching
title_short	Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching
title_full	Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching
title_fullStr	Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching
title_full_unstemmed	Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching
title_sort	improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/033511b1bdf647f5ab90c15732d1633e
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Improving the electron spin properties of nitrogen-vacancy centres in nanodiamonds by near-field etching

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