Detection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters

Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth–antimony (Bi–Sb) semiconductor alloy has...

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Autor principal:	Cherner, Iacov
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2018
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/0363095824a34281a6fd9a2407aed2ca
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id	oai:doaj.org-article:0363095824a34281a6fd9a2407aed2ca
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spelling	oai:doaj.org-article:0363095824a34281a6fd9a2407aed2ca2021-11-21T11:56:15ZDetection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters539.22537-63651810-648Xhttps://doaj.org/article/0363095824a34281a6fd9a2407aed2ca2018-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2018/article/71379https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth–antimony (Bi–Sb) semiconductor alloy has been conducted. The possibilities of designing DDs based on these contacts to operate at a temperature (T) of liquid helium of 4.2 K and 1 K have been explored. The dependences of current responsivity (CR), voltage responsivity (VR) and noise equivalent power (NEP) on the free electron concentration have been analyzed. The physical causes of these dependences have been examined. The effect the signal frequency (f) on the detecting parameters has been shown. The obtained results have been compared with the literature data. Comparison with the currently available literature data has shown that proposed DDs can be 1–2 orders better. The physical reasons for these advantages have been discussed. It has been shown that the unique properties of Bi–Sb alloys, particulalrly the Bi0.88Sb0.12 alloy, make these alloys promising materials for cryoelectronics.Cherner, IacovD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 17, Iss 3-4, Pp 202-207 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Cherner, Iacov Detection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters
description	Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth–antimony (Bi–Sb) semiconductor alloy has been conducted. The possibilities of designing DDs based on these contacts to operate at a temperature (T) of liquid helium of 4.2 K and 1 K have been explored. The dependences of current responsivity (CR), voltage responsivity (VR) and noise equivalent power (NEP) on the free electron concentration have been analyzed. The physical causes of these dependences have been examined. The effect the signal frequency (f) on the detecting parameters has been shown. The obtained results have been compared with the literature data. Comparison with the currently available literature data has shown that proposed DDs can be 1–2 orders better. The physical reasons for these advantages have been discussed. It has been shown that the unique properties of Bi–Sb alloys, particulalrly the Bi0.88Sb0.12 alloy, make these alloys promising materials for cryoelectronics.
format	article
author	Cherner, Iacov
author_facet	Cherner, Iacov
author_sort	Cherner, Iacov
title	Detection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters
title_short	Detection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters
title_full	Detection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters
title_fullStr	Detection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters
title_full_unstemmed	Detection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters
title_sort	detection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2018
url	https://doaj.org/article/0363095824a34281a6fd9a2407aed2ca
work_keys_str_mv	AT cherneriacov detectioninthecontactsatlowtemperatureseffectofthefreeelectronconcentrationonthedetectingparameters
_version_	1718419343252914176

Detection in the contacts at low temperatures: effect of the free electron concentration on the detecting parameters

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