Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radi...

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Autores principales:	Monica La Mura, Patrizia Lamberti, Vincenzo Tucci
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	design of experiments GFET graphene high-frequency RF devices tolerance analysis Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/03709be58a86402cb457b17bcbffab59
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spelling	oai:doaj.org-article:03709be58a86402cb457b17bcbffab592021-11-25T18:32:37ZNumerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors10.3390/nano111131212079-4991https://doaj.org/article/03709be58a86402cb457b17bcbffab592021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3121https://doaj.org/toc/2079-4991The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.Monica La MuraPatrizia LambertiVincenzo TucciMDPI AGarticledesign of experimentsGFETgraphenehigh-frequencyRF devicestolerance analysisChemistryQD1-999ENNanomaterials, Vol 11, Iss 3121, p 3121 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	design of experiments GFET graphene high-frequency RF devices tolerance analysis Chemistry QD1-999
spellingShingle	design of experiments GFET graphene high-frequency RF devices tolerance analysis Chemistry QD1-999 Monica La Mura Patrizia Lamberti Vincenzo Tucci Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors
description	The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.
format	article
author	Monica La Mura Patrizia Lamberti Vincenzo Tucci
author_facet	Monica La Mura Patrizia Lamberti Vincenzo Tucci
author_sort	Monica La Mura
title	Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors
title_short	Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors
title_full	Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors
title_fullStr	Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors
title_full_unstemmed	Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors
title_sort	numerical evaluation of the effect of geometric tolerances on the high-frequency performance of graphene field-effect transistors
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/03709be58a86402cb457b17bcbffab59
work_keys_str_mv	AT monicalamura numericalevaluationoftheeffectofgeometrictolerancesonthehighfrequencyperformanceofgraphenefieldeffecttransistors AT patrizialamberti numericalevaluationoftheeffectofgeometrictolerancesonthehighfrequencyperformanceofgraphenefieldeffecttransistors AT vincenzotucci numericalevaluationoftheeffectofgeometrictolerancesonthehighfrequencyperformanceofgraphenefieldeffecttransistors
_version_	1718410995716587520

Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

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