Atomic layer deposition for quantum dots based devices

Quantum dots (QDs) are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency, tunable bandgap and facile solution synthesis. Nevertheless, the limited optoelectronic performance and poor lifetime of QDs devices hinder their furth...

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Autores principales:	Zhou Binze, Liu Mengjia, Wen Yanwei, Li Yun, Chen Rong
Formato:	article
Lenguaje:	EN
Publicado:	Institue of Optics and Electronics, Chinese Academy of Sciences 2020
Materias:	atomic layer deposition quantum dots surface passivation stability carrier transport interface engineering Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/03968b19b76e45c7bc495e7a7dd989b5
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spelling	oai:doaj.org-article:03968b19b76e45c7bc495e7a7dd989b52021-11-10T10:02:56ZAtomic layer deposition for quantum dots based devices2096-457910.29026/oea.2020.190043https://doaj.org/article/03968b19b76e45c7bc495e7a7dd989b52020-09-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2020.190043https://doaj.org/toc/2096-4579Quantum dots (QDs) are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency, tunable bandgap and facile solution synthesis. Nevertheless, the limited optoelectronic performance and poor lifetime of QDs devices hinder their further applications. As a gas-phase surface treatment method, atomic layer deposition (ALD) has shown the potential in QDs surface modification and device construction owing to the atomic-level control and excellent uniformity/conformality. In this perspective, the attempts to utilize ALD techniques in QDs modification to improve the photoluminance efficiency, stability, carrier mobility, as well as interfacial carrier utilization are introduced. ALD proves to be successful in the photoluminance quantum yield (PLQY) enhancement due to the elimination of QDs surface dangling bonds and defects. The QDs stability and devices lifetime are improved greatly through the introduction of ALD barrier layers. Furthermore, the carrier transport is ameliorated efficiently by infilling interstitial spaces during ALD process. Attributed to the ultra-thin and dense coating on the interface, the improvement on optoelectronic performance is achieved. Finally, the challenges of ALD applications in QDs at present and several prospects including ALD process optimization, in-situ characterization and computational simulations are proposed.Zhou BinzeLiu MengjiaWen YanweiLi YunChen RongInstitue of Optics and Electronics, Chinese Academy of Sciencesarticleatomic layer depositionquantum dotssurface passivationstabilitycarrier transportinterface engineeringOptics. LightQC350-467ENOpto-Electronic Advances, Vol 3, Iss 9, Pp 190043-1-190043-14 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	atomic layer deposition quantum dots surface passivation stability carrier transport interface engineering Optics. Light QC350-467
spellingShingle	atomic layer deposition quantum dots surface passivation stability carrier transport interface engineering Optics. Light QC350-467 Zhou Binze Liu Mengjia Wen Yanwei Li Yun Chen Rong Atomic layer deposition for quantum dots based devices
description	Quantum dots (QDs) are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency, tunable bandgap and facile solution synthesis. Nevertheless, the limited optoelectronic performance and poor lifetime of QDs devices hinder their further applications. As a gas-phase surface treatment method, atomic layer deposition (ALD) has shown the potential in QDs surface modification and device construction owing to the atomic-level control and excellent uniformity/conformality. In this perspective, the attempts to utilize ALD techniques in QDs modification to improve the photoluminance efficiency, stability, carrier mobility, as well as interfacial carrier utilization are introduced. ALD proves to be successful in the photoluminance quantum yield (PLQY) enhancement due to the elimination of QDs surface dangling bonds and defects. The QDs stability and devices lifetime are improved greatly through the introduction of ALD barrier layers. Furthermore, the carrier transport is ameliorated efficiently by infilling interstitial spaces during ALD process. Attributed to the ultra-thin and dense coating on the interface, the improvement on optoelectronic performance is achieved. Finally, the challenges of ALD applications in QDs at present and several prospects including ALD process optimization, in-situ characterization and computational simulations are proposed.
format	article
author	Zhou Binze Liu Mengjia Wen Yanwei Li Yun Chen Rong
author_facet	Zhou Binze Liu Mengjia Wen Yanwei Li Yun Chen Rong
author_sort	Zhou Binze
title	Atomic layer deposition for quantum dots based devices
title_short	Atomic layer deposition for quantum dots based devices
title_full	Atomic layer deposition for quantum dots based devices
title_fullStr	Atomic layer deposition for quantum dots based devices
title_full_unstemmed	Atomic layer deposition for quantum dots based devices
title_sort	atomic layer deposition for quantum dots based devices
publisher	Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate	2020
url	https://doaj.org/article/03968b19b76e45c7bc495e7a7dd989b5
work_keys_str_mv	AT zhoubinze atomiclayerdepositionforquantumdotsbaseddevices AT liumengjia atomiclayerdepositionforquantumdotsbaseddevices AT wenyanwei atomiclayerdepositionforquantumdotsbaseddevices AT liyun atomiclayerdepositionforquantumdotsbaseddevices AT chenrong atomiclayerdepositionforquantumdotsbaseddevices
_version_	1718440067653959680

Atomic layer deposition for quantum dots based devices

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