Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field

The dielectric properties, tunability and figure-of-merit (<i>FOM</i>) of relaxor Pb<sub>0.9</sub>La<sub>0.1</sub>(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> (PLZT) films have been investigated. Dielectric measurements ind...

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Autores principales: Minh D. Nguyen, Doan T. Tran, Ha T. Dang, Chi T. Q. Nguyen, Guus Rijnders, Hung N. Vu
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/0448ba5c8d00480ca8fb921e1ccda59a
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Sumario:The dielectric properties, tunability and figure-of-merit (<i>FOM</i>) of relaxor Pb<sub>0.9</sub>La<sub>0.1</sub>(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and <i>FOM</i> are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (−2%) in a wide-frequency range (10 kHz–1 MHz); meanwhile, the <i>FOM</i> value decreases significantly (−17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest <i>FOM</i> factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.