Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field
The dielectric properties, tunability and figure-of-merit (<i>FOM</i>) of relaxor Pb<sub>0.9</sub>La<sub>0.1</sub>(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> (PLZT) films have been investigated. Dielectric measurements ind...
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oai:doaj.org-article:0448ba5c8d00480ca8fb921e1ccda59a2021-11-11T18:01:21ZRelaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field10.3390/ma142164481996-1944https://doaj.org/article/0448ba5c8d00480ca8fb921e1ccda59a2021-10-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6448https://doaj.org/toc/1996-1944The dielectric properties, tunability and figure-of-merit (<i>FOM</i>) of relaxor Pb<sub>0.9</sub>La<sub>0.1</sub>(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and <i>FOM</i> are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (−2%) in a wide-frequency range (10 kHz–1 MHz); meanwhile, the <i>FOM</i> value decreases significantly (−17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest <i>FOM</i> factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.Minh D. NguyenDoan T. TranHa T. DangChi T. Q. NguyenGuus RijndersHung N. VuMDPI AGarticledielectric propertiestunabilityfigure-of-meritrelaxor ferroelectricsTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6448, p 6448 (2021) |
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topic |
dielectric properties tunability figure-of-merit relaxor ferroelectrics Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
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dielectric properties tunability figure-of-merit relaxor ferroelectrics Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Minh D. Nguyen Doan T. Tran Ha T. Dang Chi T. Q. Nguyen Guus Rijnders Hung N. Vu Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field |
description |
The dielectric properties, tunability and figure-of-merit (<i>FOM</i>) of relaxor Pb<sub>0.9</sub>La<sub>0.1</sub>(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and <i>FOM</i> are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (−2%) in a wide-frequency range (10 kHz–1 MHz); meanwhile, the <i>FOM</i> value decreases significantly (−17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest <i>FOM</i> factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices. |
format |
article |
author |
Minh D. Nguyen Doan T. Tran Ha T. Dang Chi T. Q. Nguyen Guus Rijnders Hung N. Vu |
author_facet |
Minh D. Nguyen Doan T. Tran Ha T. Dang Chi T. Q. Nguyen Guus Rijnders Hung N. Vu |
author_sort |
Minh D. Nguyen |
title |
Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field |
title_short |
Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field |
title_full |
Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field |
title_fullStr |
Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field |
title_full_unstemmed |
Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field |
title_sort |
relaxor-ferroelectric films for dielectric tunable applications: effect of film thickness and applied electric field |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/0448ba5c8d00480ca8fb921e1ccda59a |
work_keys_str_mv |
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