Concepts of ferrovalley material and anomalous valley Hall effect

Spontaneous polarization leads to various functionalities promising for future information storage and electronics. Here, the authors propose the concept of ferrovalley material with spontaneous valley polarization in monolayer 2H-VSe2.

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Detalles Bibliográficos
Autores principales: Wen-Yi Tong, Shi-Jing Gong, Xiangang Wan, Chun-Gang Duan
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/04579f99f600407b8a2a800e71976556
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Sumario:Spontaneous polarization leads to various functionalities promising for future information storage and electronics. Here, the authors propose the concept of ferrovalley material with spontaneous valley polarization in monolayer 2H-VSe2.