Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering

Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering

Precisely controlled growth of oxide interfaces at the atomic layer level is critical for device applications but quite challenging. Here Sun et al. show real time monitoring and control of the surface composition of epitaxial strontium titanate perovskite films by analysing the Kikuchi lines.

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Detalles Bibliográficos
Autores principales: H. Y. Sun, Z. W. Mao, T. W. Zhang, L. Han, T. T. Zhang, X. B. Cai, X. Guo, Y. F. Li, Y. P. Zang, W. Guo, J. H. Song, D. X. Ji, C. Y. Gu, C. Tang, Z. B. Gu, N. Wang, Y. Zhu, D. G. Schlom, Y. F. Nie, X. Q. Pan
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Science
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Acceso en línea:https://doaj.org/article/045e63116a5243cdb127fb64c0b246e9
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Sumario:Precisely controlled growth of oxide interfaces at the atomic layer level is critical for device applications but quite challenging. Here Sun et al. show real time monitoring and control of the surface composition of epitaxial strontium titanate perovskite films by analysing the Kikuchi lines.

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