Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering

Precisely controlled growth of oxide interfaces at the atomic layer level is critical for device applications but quite challenging. Here Sun et al. show real time monitoring and control of the surface composition of epitaxial strontium titanate perovskite films by analysing the Kikuchi lines.

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Autores principales: H. Y. Sun, Z. W. Mao, T. W. Zhang, L. Han, T. T. Zhang, X. B. Cai, X. Guo, Y. F. Li, Y. P. Zang, W. Guo, J. H. Song, D. X. Ji, C. Y. Gu, C. Tang, Z. B. Gu, N. Wang, Y. Zhu, D. G. Schlom, Y. F. Nie, X. Q. Pan
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/045e63116a5243cdb127fb64c0b246e9
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spelling oai:doaj.org-article:045e63116a5243cdb127fb64c0b246e92021-12-02T15:33:59ZChemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering10.1038/s41467-018-04903-42041-1723https://doaj.org/article/045e63116a5243cdb127fb64c0b246e92018-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-04903-4https://doaj.org/toc/2041-1723Precisely controlled growth of oxide interfaces at the atomic layer level is critical for device applications but quite challenging. Here Sun et al. show real time monitoring and control of the surface composition of epitaxial strontium titanate perovskite films by analysing the Kikuchi lines.H. Y. SunZ. W. MaoT. W. ZhangL. HanT. T. ZhangX. B. CaiX. GuoY. F. LiY. P. ZangW. GuoJ. H. SongD. X. JiC. Y. GuC. TangZ. B. GuN. WangY. ZhuD. G. SchlomY. F. NieX. Q. PanNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
H. Y. Sun
Z. W. Mao
T. W. Zhang
L. Han
T. T. Zhang
X. B. Cai
X. Guo
Y. F. Li
Y. P. Zang
W. Guo
J. H. Song
D. X. Ji
C. Y. Gu
C. Tang
Z. B. Gu
N. Wang
Y. Zhu
D. G. Schlom
Y. F. Nie
X. Q. Pan
Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering
description Precisely controlled growth of oxide interfaces at the atomic layer level is critical for device applications but quite challenging. Here Sun et al. show real time monitoring and control of the surface composition of epitaxial strontium titanate perovskite films by analysing the Kikuchi lines.
format article
author H. Y. Sun
Z. W. Mao
T. W. Zhang
L. Han
T. T. Zhang
X. B. Cai
X. Guo
Y. F. Li
Y. P. Zang
W. Guo
J. H. Song
D. X. Ji
C. Y. Gu
C. Tang
Z. B. Gu
N. Wang
Y. Zhu
D. G. Schlom
Y. F. Nie
X. Q. Pan
author_facet H. Y. Sun
Z. W. Mao
T. W. Zhang
L. Han
T. T. Zhang
X. B. Cai
X. Guo
Y. F. Li
Y. P. Zang
W. Guo
J. H. Song
D. X. Ji
C. Y. Gu
C. Tang
Z. B. Gu
N. Wang
Y. Zhu
D. G. Schlom
Y. F. Nie
X. Q. Pan
author_sort H. Y. Sun
title Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering
title_short Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering
title_full Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering
title_fullStr Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering
title_full_unstemmed Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering
title_sort chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/045e63116a5243cdb127fb64c0b246e9
work_keys_str_mv AT hysun chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT zwmao chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT twzhang chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT lhan chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT ttzhang chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT xbcai chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT xguo chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT yfli chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT ypzang chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT wguo chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT jhsong chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT dxji chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT cygu chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT ctang chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT zbgu chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT nwang chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT yzhu chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT dgschlom chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT yfnie chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
AT xqpan chemicallyspecificterminationcontrolofoxideinterfacesvialayerbylayermeaninnerpotentialengineering
_version_ 1718386941903241216