Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices
Exploiting low-temperature formed black phase CsPbI3 for light-emitting applications remains a challenge. Here, the authors propose a method to enable the deposition of γ-CsPbI3 films at 100C and demonstrate a light-emitting diode with an external quantum efficiency of 10.4% with suppressed efficien...
Guardado en:
| Autores principales: | , , , , , , , , , , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/051b8d6a7002437eae3097967ea01aa1 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| id |
oai:doaj.org-article:051b8d6a7002437eae3097967ea01aa1 |
|---|---|
| record_format |
dspace |
| spelling |
oai:doaj.org-article:051b8d6a7002437eae3097967ea01aa12021-12-02T18:14:31ZIntermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices10.1038/s41467-020-18380-12041-1723https://doaj.org/article/051b8d6a7002437eae3097967ea01aa12020-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-18380-1https://doaj.org/toc/2041-1723Exploiting low-temperature formed black phase CsPbI3 for light-emitting applications remains a challenge. Here, the authors propose a method to enable the deposition of γ-CsPbI3 films at 100C and demonstrate a light-emitting diode with an external quantum efficiency of 10.4% with suppressed efficiency roll-off.Chang YiChao LiuKaichuan WenXiao-Ke LiuHao ZhangYong YuNing FanFuxiang JiChaoyang KuangBo MaCailing TuYa ZhangChen XueRenzhi LiFeng GaoWei HuangJianpu WangNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-8 (2020) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
Science Q |
| spellingShingle |
Science Q Chang Yi Chao Liu Kaichuan Wen Xiao-Ke Liu Hao Zhang Yong Yu Ning Fan Fuxiang Ji Chaoyang Kuang Bo Ma Cailing Tu Ya Zhang Chen Xue Renzhi Li Feng Gao Wei Huang Jianpu Wang Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices |
| description |
Exploiting low-temperature formed black phase CsPbI3 for light-emitting applications remains a challenge. Here, the authors propose a method to enable the deposition of γ-CsPbI3 films at 100C and demonstrate a light-emitting diode with an external quantum efficiency of 10.4% with suppressed efficiency roll-off. |
| format |
article |
| author |
Chang Yi Chao Liu Kaichuan Wen Xiao-Ke Liu Hao Zhang Yong Yu Ning Fan Fuxiang Ji Chaoyang Kuang Bo Ma Cailing Tu Ya Zhang Chen Xue Renzhi Li Feng Gao Wei Huang Jianpu Wang |
| author_facet |
Chang Yi Chao Liu Kaichuan Wen Xiao-Ke Liu Hao Zhang Yong Yu Ning Fan Fuxiang Ji Chaoyang Kuang Bo Ma Cailing Tu Ya Zhang Chen Xue Renzhi Li Feng Gao Wei Huang Jianpu Wang |
| author_sort |
Chang Yi |
| title |
Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices |
| title_short |
Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices |
| title_full |
Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices |
| title_fullStr |
Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices |
| title_full_unstemmed |
Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices |
| title_sort |
intermediate-phase-assisted low-temperature formation of γ-cspbi3 films for high-efficiency deep-red light-emitting devices |
| publisher |
Nature Portfolio |
| publishDate |
2020 |
| url |
https://doaj.org/article/051b8d6a7002437eae3097967ea01aa1 |
| work_keys_str_mv |
AT changyi intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT chaoliu intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT kaichuanwen intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT xiaokeliu intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT haozhang intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT yongyu intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT ningfan intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT fuxiangji intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT chaoyangkuang intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT boma intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT cailingtu intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT yazhang intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT chenxue intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT renzhili intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT fenggao intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT weihuang intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices AT jianpuwang intermediatephaseassistedlowtemperatureformationofgcspbi3filmsforhighefficiencydeepredlightemittingdevices |
| _version_ |
1718378373658443776 |