Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

Exploiting low-temperature formed black phase CsPbI3 for light-emitting applications remains a challenge. Here, the authors propose a method to enable the deposition of γ-CsPbI3 films at 100C and demonstrate a light-emitting diode with an external quantum efficiency of 10.4% with suppressed efficien...

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Autores principales: Chang Yi, Chao Liu, Kaichuan Wen, Xiao-Ke Liu, Hao Zhang, Yong Yu, Ning Fan, Fuxiang Ji, Chaoyang Kuang, Bo Ma, Cailing Tu, Ya Zhang, Chen Xue, Renzhi Li, Feng Gao, Wei Huang, Jianpu Wang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Science
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Acceso en línea:https://doaj.org/article/051b8d6a7002437eae3097967ea01aa1
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