Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices
Exploiting low-temperature formed black phase CsPbI3 for light-emitting applications remains a challenge. Here, the authors propose a method to enable the deposition of γ-CsPbI3 films at 100C and demonstrate a light-emitting diode with an external quantum efficiency of 10.4% with suppressed efficien...
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Main Authors: | , , , , , , , , , , , , , , , , |
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Format: | article |
Language: | EN |
Published: |
Nature Portfolio
2020
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Subjects: | |
Online Access: | https://doaj.org/article/051b8d6a7002437eae3097967ea01aa1 |
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