Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene

Summary: Hexagonal boron nitride (h-BN) and its heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction. However, their metal catalyst-based growth and transfer-based heterostructure assembly ap...

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Autores principales:	Isaac G. Juma, Gwangwoo Kim, Deep Jariwala, Sanjay K. Behura
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Nanotechnology fabrication Materials synthesis Nanomaterials Science Q
Acceso en línea:	https://doaj.org/article/05487cfbdb714e5b835c31f555b3aa1f
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spelling	oai:doaj.org-article:05487cfbdb714e5b835c31f555b3aa1f2021-11-20T05:10:50ZDirect growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene2589-004210.1016/j.isci.2021.103374https://doaj.org/article/05487cfbdb714e5b835c31f555b3aa1f2021-11-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2589004221013456https://doaj.org/toc/2589-0042Summary: Hexagonal boron nitride (h-BN) and its heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction. However, their metal catalyst-based growth and transfer-based heterostructure assembly approaches present impediments to obtaining high-quality and wafer-scale quantum material. Here, we have presented our perspective on the synthetic strategies that involve direct nucleation of h-BN on various dielectric substrates and its heterostructures with graphene. Mechanistic understanding of direct growth of h-BN via bottom-up approaches such as (a) the chemical-interaction guided nucleation on silicon-based dielectrics, (b) surface nitridation and N+ sputtering of h-BN target on sapphire, and (c) epitaxial growth of h-BN on sapphire, among others, are reviewed. Several design methodologies are presented for the direct growth of vertical and lateral vdW heterostructures of h-BN and graphene. These complex 2D heterostructures exhibit various physical phenomena and could potentially have a range of practical applications.Isaac G. JumaGwangwoo KimDeep JariwalaSanjay K. BehuraElsevierarticleNanotechnology fabricationMaterials synthesisNanomaterialsScienceQENiScience, Vol 24, Iss 11, Pp 103374- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Nanotechnology fabrication Materials synthesis Nanomaterials Science Q
spellingShingle	Nanotechnology fabrication Materials synthesis Nanomaterials Science Q Isaac G. Juma Gwangwoo Kim Deep Jariwala Sanjay K. Behura Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene
description	Summary: Hexagonal boron nitride (h-BN) and its heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction. However, their metal catalyst-based growth and transfer-based heterostructure assembly approaches present impediments to obtaining high-quality and wafer-scale quantum material. Here, we have presented our perspective on the synthetic strategies that involve direct nucleation of h-BN on various dielectric substrates and its heterostructures with graphene. Mechanistic understanding of direct growth of h-BN via bottom-up approaches such as (a) the chemical-interaction guided nucleation on silicon-based dielectrics, (b) surface nitridation and N+ sputtering of h-BN target on sapphire, and (c) epitaxial growth of h-BN on sapphire, among others, are reviewed. Several design methodologies are presented for the direct growth of vertical and lateral vdW heterostructures of h-BN and graphene. These complex 2D heterostructures exhibit various physical phenomena and could potentially have a range of practical applications.
format	article
author	Isaac G. Juma Gwangwoo Kim Deep Jariwala Sanjay K. Behura
author_facet	Isaac G. Juma Gwangwoo Kim Deep Jariwala Sanjay K. Behura
author_sort	Isaac G. Juma
title	Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene
title_short	Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene
title_full	Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene
title_fullStr	Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene
title_full_unstemmed	Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene
title_sort	direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/05487cfbdb714e5b835c31f555b3aa1f
work_keys_str_mv	AT isaacgjuma directgrowthofhexagonalboronnitrideonnonmetallicsubstratesanditsheterostructureswithgraphene AT gwangwookim directgrowthofhexagonalboronnitrideonnonmetallicsubstratesanditsheterostructureswithgraphene AT deepjariwala directgrowthofhexagonalboronnitrideonnonmetallicsubstratesanditsheterostructureswithgraphene AT sanjaykbehura directgrowthofhexagonalboronnitrideonnonmetallicsubstratesanditsheterostructureswithgraphene
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Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene

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