Fully Vacuum-Sealed Diode-Structure Addressable ZnO Nanowire Cold Cathode Flat-Panel X-ray Source: Fabrication and Imaging Application

A fully vacuum-sealed addressable flat-panel X-ray source based on ZnO nanowire field emitter arrays (FEAs) was fabricated. The device has a diode structure composed of cathode panel and anode panel. ZnO nanowire cold cathodes were prepared on strip electrodes on a cathode panel and Mo thin film str...

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Autores principales: Chengyun Wang, Guofu Zhang, Yuan Xu, Yicong Chen, Shaozhi Deng, Jun Chen
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/05d9c4221889412c85ded1e1211d47fe
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Sumario:A fully vacuum-sealed addressable flat-panel X-ray source based on ZnO nanowire field emitter arrays (FEAs) was fabricated. The device has a diode structure composed of cathode panel and anode panel. ZnO nanowire cold cathodes were prepared on strip electrodes on a cathode panel and Mo thin film strips were prepared on an anode panel acting as the target. Localized X-ray emission was realized by cross-addressing of cathode and anode electrodes. A radiation dose rate of 10.8 μGy/s was recorded at the anode voltage of 32 kV. The X-ray imaging of objects using different addressing scheme was obtained and the imaging results were analyzed. The results demonstrated the feasibility of achieving addressable flat-panel X-ray source using diode-structure for advanced X-ray imaging.