Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films

Abstract A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu2O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu2O is govern...

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Autores principales:	Sanggil Han, Andrew J. Flewitt
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/064a34c83afb43f99bb7d088bb4b1b88
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spelling	oai:doaj.org-article:064a34c83afb43f99bb7d088bb4b1b882021-12-02T12:32:40ZAnalysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films10.1038/s41598-017-05893-x2045-2322https://doaj.org/article/064a34c83afb43f99bb7d088bb4b1b882017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05893-xhttps://doaj.org/toc/2045-2322Abstract A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu2O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu2O is governed by grain-boundary-limited conduction (GLC), while after high-temperature annealing, GLC becomes insignificant and trap-limited conduction (TLC) dominates. This suggests that the very low Hall mobility of as-deposited Cu2O is due to significant GLC, and the Hall mobility enhancement by high-temperature annealing is determined by TLC. Evaluation of the grain size and the energy barrier height at the grain boundary shows an increase in the grain size and a considerable decrease in the energy barrier height after high-temperature annealing, which is considered to be the cause of the significant reduction in the GLC effect. Additionally, the density of copper vacancies was extracted; this quantitatively shows that an increase in annealing temperature leads to a reduction in copper vacancies.Sanggil HanAndrew J. FlewittNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sanggil Han Andrew J. Flewitt Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films
description	Abstract A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu2O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu2O is governed by grain-boundary-limited conduction (GLC), while after high-temperature annealing, GLC becomes insignificant and trap-limited conduction (TLC) dominates. This suggests that the very low Hall mobility of as-deposited Cu2O is due to significant GLC, and the Hall mobility enhancement by high-temperature annealing is determined by TLC. Evaluation of the grain size and the energy barrier height at the grain boundary shows an increase in the grain size and a considerable decrease in the energy barrier height after high-temperature annealing, which is considered to be the cause of the significant reduction in the GLC effect. Additionally, the density of copper vacancies was extracted; this quantitatively shows that an increase in annealing temperature leads to a reduction in copper vacancies.
format	article
author	Sanggil Han Andrew J. Flewitt
author_facet	Sanggil Han Andrew J. Flewitt
author_sort	Sanggil Han
title	Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films
title_short	Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films
title_full	Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films
title_fullStr	Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films
title_full_unstemmed	Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films
title_sort	analysis of the conduction mechanism and copper vacancy density in p-type cu2o thin films
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/064a34c83afb43f99bb7d088bb4b1b88
work_keys_str_mv	AT sanggilhan analysisoftheconductionmechanismandcoppervacancydensityinptypecu2othinfilms AT andrewjflewitt analysisoftheconductionmechanismandcoppervacancydensityinptypecu2othinfilms
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Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films

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