Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films

Abstract A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu2O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu2O is govern...

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Bibliographic Details
Main Authors: Sanggil Han, Andrew J. Flewitt
Format: article
Language:EN
Published: Nature Portfolio 2017
Subjects:
R
Q
Online Access:https://doaj.org/article/064a34c83afb43f99bb7d088bb4b1b88
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