Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures

Abstract Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most common...

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Autores principales:	Mahdi Hajlaoui, Stefano Ponzoni, Michael Deppe, Tobias Henksmeier, Donat Josef As, Dirk Reuter, Thomas Zentgraf, Gunther Springholz, Claus Michael Schneider, Stefan Cramm, Mirko Cinchetti
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/0679b3ef16534d6b8c5fbd41db5044c3
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spelling	oai:doaj.org-article:0679b3ef16534d6b8c5fbd41db5044c32021-12-02T18:51:08ZExtremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures10.1038/s41598-021-98569-62045-2322https://doaj.org/article/0679b3ef16534d6b8c5fbd41db5044c32021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-98569-6https://doaj.org/toc/2045-2322Abstract Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaging in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low-energy ARPES (photon energy ~ 7 eV) to increase depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion, because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low-energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples’ properties required to perform extremely low-energy ARPES experiments on electronic states buried in semiconductor heterostructures.Mahdi HajlaouiStefano PonzoniMichael DeppeTobias HenksmeierDonat Josef AsDirk ReuterThomas ZentgrafGunther SpringholzClaus Michael SchneiderStefan CrammMirko CinchettiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mahdi Hajlaoui Stefano Ponzoni Michael Deppe Tobias Henksmeier Donat Josef As Dirk Reuter Thomas Zentgraf Gunther Springholz Claus Michael Schneider Stefan Cramm Mirko Cinchetti Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
description	Abstract Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaging in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low-energy ARPES (photon energy ~ 7 eV) to increase depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion, because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low-energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples’ properties required to perform extremely low-energy ARPES experiments on electronic states buried in semiconductor heterostructures.
format	article
author	Mahdi Hajlaoui Stefano Ponzoni Michael Deppe Tobias Henksmeier Donat Josef As Dirk Reuter Thomas Zentgraf Gunther Springholz Claus Michael Schneider Stefan Cramm Mirko Cinchetti
author_facet	Mahdi Hajlaoui Stefano Ponzoni Michael Deppe Tobias Henksmeier Donat Josef As Dirk Reuter Thomas Zentgraf Gunther Springholz Claus Michael Schneider Stefan Cramm Mirko Cinchetti
author_sort	Mahdi Hajlaoui
title	Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
title_short	Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
title_full	Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
title_fullStr	Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
title_full_unstemmed	Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
title_sort	extremely low-energy arpes of quantum well states in cubic-gan/aln and gaas/algaas heterostructures
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/0679b3ef16534d6b8c5fbd41db5044c3
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_version_	1718377426288902144

Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures

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