Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

Abstract Hybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered...

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Autores principales:	Amir Muhammad Afzal, In-Gon Bae, Yushika Aggarwal, Jaewoo Park, Hye-Ryeon Jeong, Eun Ha Choi, Byoungchoo Park
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/0708ecacc9154404972d8e370761431c
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spelling	oai:doaj.org-article:0708ecacc9154404972d8e370761431c2021-12-02T15:13:06ZHighly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer10.1038/s41598-020-80640-32045-2322https://doaj.org/article/0708ecacc9154404972d8e370761431c2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-80640-3https://doaj.org/toc/2045-2322Abstract Hybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.Amir Muhammad AfzalIn-Gon BaeYushika AggarwalJaewoo ParkHye-Ryeon JeongEun Ha ChoiByoungchoo ParkNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Amir Muhammad Afzal In-Gon Bae Yushika Aggarwal Jaewoo Park Hye-Ryeon Jeong Eun Ha Choi Byoungchoo Park Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer
description	Abstract Hybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.
format	article
author	Amir Muhammad Afzal In-Gon Bae Yushika Aggarwal Jaewoo Park Hye-Ryeon Jeong Eun Ha Choi Byoungchoo Park
author_facet	Amir Muhammad Afzal In-Gon Bae Yushika Aggarwal Jaewoo Park Hye-Ryeon Jeong Eun Ha Choi Byoungchoo Park
author_sort	Amir Muhammad Afzal
title	Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer
title_short	Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer
title_full	Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer
title_fullStr	Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer
title_full_unstemmed	Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer
title_sort	highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport niox layer
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/0708ecacc9154404972d8e370761431c
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Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

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