Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT

A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is fabricated by molecular beam epitaxy (MBE). The force...

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Autores principales:	Rui-Rong Wang, Hao Guo, Jun Tang, Jin-Ping Liu, Li-Shuang Liu
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	InAs QD HEMT force-sensitive Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/077282d0bd3e4599aabd48d09f76c611
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spelling	oai:doaj.org-article:077282d0bd3e4599aabd48d09f76c6112021-11-25T18:23:49ZResearch on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT10.3390/mi121114132072-666Xhttps://doaj.org/article/077282d0bd3e4599aabd48d09f76c6112021-11-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1413https://doaj.org/toc/2072-666XA force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is fabricated by molecular beam epitaxy (MBE). The force-sensitivity characteristic of the QD HEMT is studied by the electrical and mechanical properties. The electrical characteristics show that the InAs QD-HEMT has linear, cut-off, and saturation operating states, and produces different output currents under different gate voltages, which shows that the structure is reasonable. Furthermore, the results of the output characteristics under different pressure show that the output voltage of the QD-HEMT decreases with the increase in pressure, which indicates that the InAs QD-HEMT has a vital mechanical–electrical coupling characteristic. The output voltage of the InAs QD-HEMT in the range of 0–100 kPa shows that the sensitivity was 1.09 mV/kPa.Rui-Rong WangHao GuoJun TangJin-Ping LiuLi-Shuang LiuMDPI AGarticleInAs QDHEMTforce-sensitiveMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1413, p 1413 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	InAs QD HEMT force-sensitive Mechanical engineering and machinery TJ1-1570
spellingShingle	InAs QD HEMT force-sensitive Mechanical engineering and machinery TJ1-1570 Rui-Rong Wang Hao Guo Jun Tang Jin-Ping Liu Li-Shuang Liu Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
description	A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is fabricated by molecular beam epitaxy (MBE). The force-sensitivity characteristic of the QD HEMT is studied by the electrical and mechanical properties. The electrical characteristics show that the InAs QD-HEMT has linear, cut-off, and saturation operating states, and produces different output currents under different gate voltages, which shows that the structure is reasonable. Furthermore, the results of the output characteristics under different pressure show that the output voltage of the QD-HEMT decreases with the increase in pressure, which indicates that the InAs QD-HEMT has a vital mechanical–electrical coupling characteristic. The output voltage of the InAs QD-HEMT in the range of 0–100 kPa shows that the sensitivity was 1.09 mV/kPa.
format	article
author	Rui-Rong Wang Hao Guo Jun Tang Jin-Ping Liu Li-Shuang Liu
author_facet	Rui-Rong Wang Hao Guo Jun Tang Jin-Ping Liu Li-Shuang Liu
author_sort	Rui-Rong Wang
title	Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
title_short	Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
title_full	Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
title_fullStr	Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
title_full_unstemmed	Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
title_sort	research on the force-sensitive characteristic of inas qd embedded in hemt
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/077282d0bd3e4599aabd48d09f76c611
work_keys_str_mv	AT ruirongwang researchontheforcesensitivecharacteristicofinasqdembeddedinhemt AT haoguo researchontheforcesensitivecharacteristicofinasqdembeddedinhemt AT juntang researchontheforcesensitivecharacteristicofinasqdembeddedinhemt AT jinpingliu researchontheforcesensitivecharacteristicofinasqdembeddedinhemt AT lishuangliu researchontheforcesensitivecharacteristicofinasqdembeddedinhemt
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Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT

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