Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is fabricated by molecular beam epitaxy (MBE). The force...
Enregistré dans:
| Auteurs principaux: | , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
MDPI AG
2021
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/077282d0bd3e4599aabd48d09f76c611 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Soyez le premier à ajouter un commentaire!