Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers

Abstract The evidence of multi-photon absorption enhancement by the dual-wavelength double-pulse laser irradiation in transparent sapphire was demonstrated experimentally and explained theoretically for the first time. Two collinearly combined laser beams with the wavelengths of 1064 nm and 355 nm,...

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Autores principales:	Mindaugas Gedvilas, Justinas Mikšys, Jonas Berzinš, Valdemar Stankevič, Gediminas Račiukaitis
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/078b28d5921a409cbcf6906fcd30c373
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spelling	oai:doaj.org-article:078b28d5921a409cbcf6906fcd30c3732021-12-02T11:40:13ZMulti-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers10.1038/s41598-017-05548-x2045-2322https://doaj.org/article/078b28d5921a409cbcf6906fcd30c3732017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05548-xhttps://doaj.org/toc/2045-2322Abstract The evidence of multi-photon absorption enhancement by the dual-wavelength double-pulse laser irradiation in transparent sapphire was demonstrated experimentally and explained theoretically for the first time. Two collinearly combined laser beams with the wavelengths of 1064 nm and 355 nm, inter-pulse delay of 0.1 ns, and pulse duration of 10 ps were used to induce intra-volume modifications in sapphire. The theoretical prediction of using a particular orientation angle of 15 degrees of the half-wave plate for the most efficient absorption of laser irradiation is in good agreement with the experimental data. The new innovative effect of multi-photon absorption enhancement by dual-wavelength double-pulse irradiation allowed utilisation of the laser energy up to four times more efficiently for initiation of internal modifications in sapphire. The new absorption enhancement effect has been used for efficient intra-volume dicing and singulation of transparent sapphire wafers. The dicing speed of 150 mm/s was achieved for the 430 μm thick sapphire wafer by using the laser power of 6.8 W at the repetition rate of 100 kHz. This method opens new opportunities for the manufacturers of the GaN-based light-emitting diodes by fast and precise separation of sapphire substrates.Mindaugas GedvilasJustinas MikšysJonas BerzinšValdemar StankevičGediminas RačiukaitisNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mindaugas Gedvilas Justinas Mikšys Jonas Berzinš Valdemar Stankevič Gediminas Račiukaitis Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers
description	Abstract The evidence of multi-photon absorption enhancement by the dual-wavelength double-pulse laser irradiation in transparent sapphire was demonstrated experimentally and explained theoretically for the first time. Two collinearly combined laser beams with the wavelengths of 1064 nm and 355 nm, inter-pulse delay of 0.1 ns, and pulse duration of 10 ps were used to induce intra-volume modifications in sapphire. The theoretical prediction of using a particular orientation angle of 15 degrees of the half-wave plate for the most efficient absorption of laser irradiation is in good agreement with the experimental data. The new innovative effect of multi-photon absorption enhancement by dual-wavelength double-pulse irradiation allowed utilisation of the laser energy up to four times more efficiently for initiation of internal modifications in sapphire. The new absorption enhancement effect has been used for efficient intra-volume dicing and singulation of transparent sapphire wafers. The dicing speed of 150 mm/s was achieved for the 430 μm thick sapphire wafer by using the laser power of 6.8 W at the repetition rate of 100 kHz. This method opens new opportunities for the manufacturers of the GaN-based light-emitting diodes by fast and precise separation of sapphire substrates.
format	article
author	Mindaugas Gedvilas Justinas Mikšys Jonas Berzinš Valdemar Stankevič Gediminas Račiukaitis
author_facet	Mindaugas Gedvilas Justinas Mikšys Jonas Berzinš Valdemar Stankevič Gediminas Račiukaitis
author_sort	Mindaugas Gedvilas
title	Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers
title_short	Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers
title_full	Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers
title_fullStr	Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers
title_full_unstemmed	Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers
title_sort	multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/078b28d5921a409cbcf6906fcd30c373
work_keys_str_mv	AT mindaugasgedvilas multiphotonabsorptionenhancementbydualwavelengthdoublepulselaserirradiationforefficientdicingofsapphirewafers AT justinasmiksys multiphotonabsorptionenhancementbydualwavelengthdoublepulselaserirradiationforefficientdicingofsapphirewafers AT jonasberzins multiphotonabsorptionenhancementbydualwavelengthdoublepulselaserirradiationforefficientdicingofsapphirewafers AT valdemarstankevic multiphotonabsorptionenhancementbydualwavelengthdoublepulselaserirradiationforefficientdicingofsapphirewafers AT gediminasraciukaitis multiphotonabsorptionenhancementbydualwavelengthdoublepulselaserirradiationforefficientdicingofsapphirewafers
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Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers

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