High-frequency rectifiers based on type-II Dirac fermions

High-frequency rectifiers at terahertz regime are pivotal components in modern communication, whereas the drawbacks in semiconductor junctions-based devices inhibit their usages. Here, the authors report electromagnetic rectification with high signal-to-noise ratio driven by chiral Bloch-electrons i...

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Autores principales: Libo Zhang, Zhiqingzi Chen, Kaixuan Zhang, Lin Wang, Huang Xu, Li Han, Wanlong Guo, Yao Yang, Chia-Nung Kuo, Chin Shan Lue, Debashis Mondal, Jun Fuji, Ivana Vobornik, Barun Ghosh, Amit Agarwal, Huaizhong Xing, Xiaoshuang Chen, Antonio Politano, Wei Lu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/07a622b5bd0a497ab158a80cd719ffd2
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spelling oai:doaj.org-article:07a622b5bd0a497ab158a80cd719ffd22021-12-02T13:34:29ZHigh-frequency rectifiers based on type-II Dirac fermions10.1038/s41467-021-21906-w2041-1723https://doaj.org/article/07a622b5bd0a497ab158a80cd719ffd22021-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-21906-whttps://doaj.org/toc/2041-1723High-frequency rectifiers at terahertz regime are pivotal components in modern communication, whereas the drawbacks in semiconductor junctions-based devices inhibit their usages. Here, the authors report electromagnetic rectification with high signal-to-noise ratio driven by chiral Bloch-electrons in type-II Dirac semimetal NiTe2-based device allowing for efficient THz detection.Libo ZhangZhiqingzi ChenKaixuan ZhangLin WangHuang XuLi HanWanlong GuoYao YangChia-Nung KuoChin Shan LueDebashis MondalJun FujiIvana VobornikBarun GhoshAmit AgarwalHuaizhong XingXiaoshuang ChenAntonio PolitanoWei LuNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Libo Zhang
Zhiqingzi Chen
Kaixuan Zhang
Lin Wang
Huang Xu
Li Han
Wanlong Guo
Yao Yang
Chia-Nung Kuo
Chin Shan Lue
Debashis Mondal
Jun Fuji
Ivana Vobornik
Barun Ghosh
Amit Agarwal
Huaizhong Xing
Xiaoshuang Chen
Antonio Politano
Wei Lu
High-frequency rectifiers based on type-II Dirac fermions
description High-frequency rectifiers at terahertz regime are pivotal components in modern communication, whereas the drawbacks in semiconductor junctions-based devices inhibit their usages. Here, the authors report electromagnetic rectification with high signal-to-noise ratio driven by chiral Bloch-electrons in type-II Dirac semimetal NiTe2-based device allowing for efficient THz detection.
format article
author Libo Zhang
Zhiqingzi Chen
Kaixuan Zhang
Lin Wang
Huang Xu
Li Han
Wanlong Guo
Yao Yang
Chia-Nung Kuo
Chin Shan Lue
Debashis Mondal
Jun Fuji
Ivana Vobornik
Barun Ghosh
Amit Agarwal
Huaizhong Xing
Xiaoshuang Chen
Antonio Politano
Wei Lu
author_facet Libo Zhang
Zhiqingzi Chen
Kaixuan Zhang
Lin Wang
Huang Xu
Li Han
Wanlong Guo
Yao Yang
Chia-Nung Kuo
Chin Shan Lue
Debashis Mondal
Jun Fuji
Ivana Vobornik
Barun Ghosh
Amit Agarwal
Huaizhong Xing
Xiaoshuang Chen
Antonio Politano
Wei Lu
author_sort Libo Zhang
title High-frequency rectifiers based on type-II Dirac fermions
title_short High-frequency rectifiers based on type-II Dirac fermions
title_full High-frequency rectifiers based on type-II Dirac fermions
title_fullStr High-frequency rectifiers based on type-II Dirac fermions
title_full_unstemmed High-frequency rectifiers based on type-II Dirac fermions
title_sort high-frequency rectifiers based on type-ii dirac fermions
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/07a622b5bd0a497ab158a80cd719ffd2
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