Polarization-insensitive GaN metalenses at visible wavelengths

Abstract The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required...

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Autores principales:	Meng-Hsin Chen, Cheng-Wei Yen, Chia-Chun Guo, Vin-Cent Su, Chieh-Hsiung Kuan, Hoang Yan Lin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/07b434d098d54d84a75ba4fa867173f3
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spelling	oai:doaj.org-article:07b434d098d54d84a75ba4fa867173f32021-12-02T16:14:16ZPolarization-insensitive GaN metalenses at visible wavelengths10.1038/s41598-021-94176-72045-2322https://doaj.org/article/07b434d098d54d84a75ba4fa867173f32021-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-94176-7https://doaj.org/toc/2045-2322Abstract The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning electron microscope (SEM) or optical microscope (OM) with bulky objectives. On the other hand, ultra-thin metasurfaces have been widely used in widespread applications, especially for converging lenses. In this study, we propose newly developed, highly efficient hexagon-resonated elements (HREs) combined with gingerly selected subwavelength periods of the elements for the construction of polarization-insensitive metalenses of high performance. Also, the well-developed fabrication techniques have been employed to realize the high-aspect-ratio metalenses working at three distinct wavelengths of 405, 532, and 633 nm with respective diffraction-limited focusing efficiencies of 93%, 86%, and 92%. The 1951 United States Air Force (USAF) test chart has been chosen to characterize the imaging capability. All of the images formed by the 405-nm-designed metalens show exceptional clear line features, and the smallest resolvable features are lines with widths of 870 nm. To perform the inspection capacity for patterned substrates, for the proof of concept, a commercially available patterned sapphire substrate (PSS) for the growth of the GaN LEDs has been opted and carefully examined by the high-resolution SEM system. With the appropriately chosen metalenses at the desired wavelength, the summits of structures in the PSS can be clearly observed in the images. The PSS imaging qualities taken by the ultra-thin and light-weight metalenses with a numerical aperture (NA) of 0.3 are comparable to those seen by an objective with the NA of 0.4. This work can pioneer semiconductor manufacturing to choose the polarization-insensitive GaN metalenses to inspect the patterned structures instead of using the SEM or the bulky and heavy conventional objectives.Meng-Hsin ChenCheng-Wei YenChia-Chun GuoVin-Cent SuChieh-Hsiung KuanHoang Yan LinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Meng-Hsin Chen Cheng-Wei Yen Chia-Chun Guo Vin-Cent Su Chieh-Hsiung Kuan Hoang Yan Lin Polarization-insensitive GaN metalenses at visible wavelengths
description	Abstract The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning electron microscope (SEM) or optical microscope (OM) with bulky objectives. On the other hand, ultra-thin metasurfaces have been widely used in widespread applications, especially for converging lenses. In this study, we propose newly developed, highly efficient hexagon-resonated elements (HREs) combined with gingerly selected subwavelength periods of the elements for the construction of polarization-insensitive metalenses of high performance. Also, the well-developed fabrication techniques have been employed to realize the high-aspect-ratio metalenses working at three distinct wavelengths of 405, 532, and 633 nm with respective diffraction-limited focusing efficiencies of 93%, 86%, and 92%. The 1951 United States Air Force (USAF) test chart has been chosen to characterize the imaging capability. All of the images formed by the 405-nm-designed metalens show exceptional clear line features, and the smallest resolvable features are lines with widths of 870 nm. To perform the inspection capacity for patterned substrates, for the proof of concept, a commercially available patterned sapphire substrate (PSS) for the growth of the GaN LEDs has been opted and carefully examined by the high-resolution SEM system. With the appropriately chosen metalenses at the desired wavelength, the summits of structures in the PSS can be clearly observed in the images. The PSS imaging qualities taken by the ultra-thin and light-weight metalenses with a numerical aperture (NA) of 0.3 are comparable to those seen by an objective with the NA of 0.4. This work can pioneer semiconductor manufacturing to choose the polarization-insensitive GaN metalenses to inspect the patterned structures instead of using the SEM or the bulky and heavy conventional objectives.
format	article
author	Meng-Hsin Chen Cheng-Wei Yen Chia-Chun Guo Vin-Cent Su Chieh-Hsiung Kuan Hoang Yan Lin
author_facet	Meng-Hsin Chen Cheng-Wei Yen Chia-Chun Guo Vin-Cent Su Chieh-Hsiung Kuan Hoang Yan Lin
author_sort	Meng-Hsin Chen
title	Polarization-insensitive GaN metalenses at visible wavelengths
title_short	Polarization-insensitive GaN metalenses at visible wavelengths
title_full	Polarization-insensitive GaN metalenses at visible wavelengths
title_fullStr	Polarization-insensitive GaN metalenses at visible wavelengths
title_full_unstemmed	Polarization-insensitive GaN metalenses at visible wavelengths
title_sort	polarization-insensitive gan metalenses at visible wavelengths
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/07b434d098d54d84a75ba4fa867173f3
work_keys_str_mv	AT menghsinchen polarizationinsensitiveganmetalensesatvisiblewavelengths AT chengweiyen polarizationinsensitiveganmetalensesatvisiblewavelengths AT chiachunguo polarizationinsensitiveganmetalensesatvisiblewavelengths AT vincentsu polarizationinsensitiveganmetalensesatvisiblewavelengths AT chiehhsiungkuan polarizationinsensitiveganmetalensesatvisiblewavelengths AT hoangyanlin polarizationinsensitiveganmetalensesatvisiblewavelengths
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Polarization-insensitive GaN metalenses at visible wavelengths

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