Polarization-insensitive GaN metalenses at visible wavelengths

Abstract The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required...

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Autores principales: Meng-Hsin Chen, Cheng-Wei Yen, Chia-Chun Guo, Vin-Cent Su, Chieh-Hsiung Kuan, Hoang Yan Lin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/07b434d098d54d84a75ba4fa867173f3
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