Controlling magnetic transition of monovacancy graphene by shear distortion

Abstract The effect of shear distortion on the vacancy induced magnetism in graphene is investigated using extensive first-principles calculations. It is found that shear distortion can lead to magnetic transition between two states with high and low magnetic moments. Such a transition is reversible...

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Auteurs principaux: Fei Gao, Shiwu Gao
Format: article
Langue:EN
Publié: Nature Portfolio 2017
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Accès en ligne:https://doaj.org/article/08ac25367b4847d4a267efb65b2f2cf6
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Résumé:Abstract The effect of shear distortion on the vacancy induced magnetism in graphene is investigated using extensive first-principles calculations. It is found that shear distortion can lead to magnetic transition between two states with high and low magnetic moments. Such a transition is reversible and results from the breaking of the in-plane symmetry of the local atoms, which reverses spin polarization of the π bands of the vacancy states near the Fermi level and leads to the change of magnetic transition by 1 µB. This finding opens the possibility for nanomechanical control of graphene magnetism and has potential applications in spintronics and magnetic sensing.