Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications

Abstract Inspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS2 heterojunction. Good gate-tunable current-rectifying characteristics are observ...

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Autores principales:	Mengxing Sun, Dan Xie, Yilin Sun, Weiwei Li, Changjiu Teng, Jianlong Xu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/09685c43820d4b7cafa32f602ab438a8
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spelling	oai:doaj.org-article:09685c43820d4b7cafa32f602ab438a82021-12-02T16:08:22ZLateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications10.1038/s41598-017-04925-w2045-2322https://doaj.org/article/09685c43820d4b7cafa32f602ab438a82017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04925-whttps://doaj.org/toc/2045-2322Abstract Inspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS2 heterojunction. Good gate-tunable current-rectifying characteristics are observed with a rectification ratio of 103 at V gs = 10 V, which may offer an evidence on the existence of the heterojunction. Upon illumination from ultraviolet to visible light, the multilayer/monolayer MoS2 heterojunction shows outstanding photodetective performance, with a photoresponsivity of 103 A/W, a photosensitivity of 1.7 × 105 and a detectivity of 7 × 1010 Jones at 470 nm light illumination. Abnormal photoresponse under positive gate voltage is observed and analyzed, which indicates the important role of the heterojunction in the photocurrent generation process. We believe that these results contribute to a better understanding on the fundamental physics of band alignment for multilayer/monolayer MoS2 heterojunction and provide us a feasible solution for novel electronic and optoelectronic devices.Mengxing SunDan XieYilin SunWeiwei LiChangjiu TengJianlong XuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mengxing Sun Dan Xie Yilin Sun Weiwei Li Changjiu Teng Jianlong Xu Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
description	Abstract Inspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS2 heterojunction. Good gate-tunable current-rectifying characteristics are observed with a rectification ratio of 103 at V gs = 10 V, which may offer an evidence on the existence of the heterojunction. Upon illumination from ultraviolet to visible light, the multilayer/monolayer MoS2 heterojunction shows outstanding photodetective performance, with a photoresponsivity of 103 A/W, a photosensitivity of 1.7 × 105 and a detectivity of 7 × 1010 Jones at 470 nm light illumination. Abnormal photoresponse under positive gate voltage is observed and analyzed, which indicates the important role of the heterojunction in the photocurrent generation process. We believe that these results contribute to a better understanding on the fundamental physics of band alignment for multilayer/monolayer MoS2 heterojunction and provide us a feasible solution for novel electronic and optoelectronic devices.
format	article
author	Mengxing Sun Dan Xie Yilin Sun Weiwei Li Changjiu Teng Jianlong Xu
author_facet	Mengxing Sun Dan Xie Yilin Sun Weiwei Li Changjiu Teng Jianlong Xu
author_sort	Mengxing Sun
title	Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
title_short	Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
title_full	Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
title_fullStr	Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
title_full_unstemmed	Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
title_sort	lateral multilayer/monolayer mos2 heterojunction for high performance photodetector applications
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/09685c43820d4b7cafa32f602ab438a8
work_keys_str_mv	AT mengxingsun lateralmultilayermonolayermos2heterojunctionforhighperformancephotodetectorapplications AT danxie lateralmultilayermonolayermos2heterojunctionforhighperformancephotodetectorapplications AT yilinsun lateralmultilayermonolayermos2heterojunctionforhighperformancephotodetectorapplications AT weiweili lateralmultilayermonolayermos2heterojunctionforhighperformancephotodetectorapplications AT changjiuteng lateralmultilayermonolayermos2heterojunctionforhighperformancephotodetectorapplications AT jianlongxu lateralmultilayermonolayermos2heterojunctionforhighperformancephotodetectorapplications
_version_	1718384513205141504

Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications

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