High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces

The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar st...

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Autores principales: Cizhe Fang, Qiyu Yang, Qingchen Yuan, Xuetao Gan, Jianlin Zhao, Yao Shao, Yan Liu, Genquan Han, Yue Hao
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Publicado: Institue of Optics and Electronics, Chinese Academy of Sciences 2021
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Acceso en línea:https://doaj.org/article/09886b026a464c0cbede9debdd999203
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spelling oai:doaj.org-article:09886b026a464c0cbede9debdd9992032021-11-17T07:52:56ZHigh-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces2096-457910.29026/oea.2021.200030https://doaj.org/article/09886b026a464c0cbede9debdd9992032021-06-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2021.200030https://doaj.org/toc/2096-4579The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.Cizhe FangQiyu YangQingchen YuanXuetao GanJianlin ZhaoYao ShaoYan LiuGenquan HanYue HaoInstitue of Optics and Electronics, Chinese Academy of Sciencesarticleall-dielectric metasurfacebound states in the continuumoptical nonlinearitytopological configurationOptics. LightQC350-467ENOpto-Electronic Advances, Vol 4, Iss 6, Pp 1-10 (2021)
institution DOAJ
collection DOAJ
language EN
topic all-dielectric metasurface
bound states in the continuum
optical nonlinearity
topological configuration
Optics. Light
QC350-467
spellingShingle all-dielectric metasurface
bound states in the continuum
optical nonlinearity
topological configuration
Optics. Light
QC350-467
Cizhe Fang
Qiyu Yang
Qingchen Yuan
Xuetao Gan
Jianlin Zhao
Yao Shao
Yan Liu
Genquan Han
Yue Hao
High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
description The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.
format article
author Cizhe Fang
Qiyu Yang
Qingchen Yuan
Xuetao Gan
Jianlin Zhao
Yao Shao
Yan Liu
Genquan Han
Yue Hao
author_facet Cizhe Fang
Qiyu Yang
Qingchen Yuan
Xuetao Gan
Jianlin Zhao
Yao Shao
Yan Liu
Genquan Han
Yue Hao
author_sort Cizhe Fang
title High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
title_short High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
title_full High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
title_fullStr High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
title_full_unstemmed High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
title_sort high-q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
publisher Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate 2021
url https://doaj.org/article/09886b026a464c0cbede9debdd999203
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