Chemical bonding and Born charge in 1T-HfS2
Abstract We combine infrared absorption and Raman scattering spectroscopies to explore the properties of the heavy transition metal dichalcogenide 1T-HfS2. We employ the LO–TO splitting of the E u vibrational mode along with a reevaluation of mode mass, unit cell volume, and dielectric constant to r...
Enregistré dans:
Auteurs principaux: | S. N. Neal, S. Li, T. Birol, J. L. Musfeldt |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/0a3e7a6b9ceb43ca8c5ddb86bc3ed30f |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
par: Roda Nur, et autres
Publié: (2020) -
Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
par: Hae Won Cho, et autres
Publié: (2021) -
Author Correction: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
par: Hae Won Cho, et autres
Publié: (2021) -
Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation
par: Kookjin Lee, et autres
Publié: (2021) -
Examining oxidation in β-NiAl and β-NiAl+Hf alloys by stochastic cellular automata simulations
par: Indranil Roy, et autres
Publié: (2021)