Passivation of InP solar cells using large area hexagonal-BN layers

Abstract Surface passivation is crucial for many high-performance solid-state devices, especially solar cells. It has been proposed that 2D hexagonal boron nitride (hBN) films can provide near-ideal passivation due to their wide bandgap, lack of dangling bonds, high dielectric constant, and easy tra...

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Autores principales:	Vidur Raj, Dipankar Chugh, Lachlan E. Black, M. M. Shehata, Li Li, Felipe Kremer, Daniel H. Macdonald, Hark Hoe Tan, Chennupati Jagadish
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/0a666fcfc99c436eaec78a2b7de54ec6
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spelling	oai:doaj.org-article:0a666fcfc99c436eaec78a2b7de54ec62021-12-02T14:40:26ZPassivation of InP solar cells using large area hexagonal-BN layers10.1038/s41699-020-00192-y2397-7132https://doaj.org/article/0a666fcfc99c436eaec78a2b7de54ec62021-01-01T00:00:00Zhttps://doi.org/10.1038/s41699-020-00192-yhttps://doaj.org/toc/2397-7132Abstract Surface passivation is crucial for many high-performance solid-state devices, especially solar cells. It has been proposed that 2D hexagonal boron nitride (hBN) films can provide near-ideal passivation due to their wide bandgap, lack of dangling bonds, high dielectric constant, and easy transferability to a range of substrates without disturbing their bulk properties. However, so far, the passivation of hBN has been studied for small areas, mainly because of its small sizes. Here, we report the passivation characteristics of wafer-scale, few monolayers thick, hBN grown by metalorganic chemical vapor deposition. Using a recently reported ITO/i-InP/p+-InP solar cell structure, we show a significant improvement in solar cell performance utilizing a few monolayers of hBN as the passivation layer. Interface defect density (at the hBN/i-InP) calculated using C–V measurement was 2 × 1012 eV−1cm−2 and was found comparable to several previously reported passivation layers. Thus, hBN may, in the future, be a possible candidate to achieve high-quality passivation. hBN-based passivation layers can mainly be useful in cases where the growth of lattice-matched passivation layers is complicated, as in the case of thin-film vapor–liquid–solid and close-spaced vapor transport-based III–V semiconductor growth techniques.Vidur RajDipankar ChughLachlan E. BlackM. M. ShehataLi LiFelipe KremerDaniel H. MacdonaldHark Hoe TanChennupati JagadishNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Vidur Raj Dipankar Chugh Lachlan E. Black M. M. Shehata Li Li Felipe Kremer Daniel H. Macdonald Hark Hoe Tan Chennupati Jagadish Passivation of InP solar cells using large area hexagonal-BN layers
description	Abstract Surface passivation is crucial for many high-performance solid-state devices, especially solar cells. It has been proposed that 2D hexagonal boron nitride (hBN) films can provide near-ideal passivation due to their wide bandgap, lack of dangling bonds, high dielectric constant, and easy transferability to a range of substrates without disturbing their bulk properties. However, so far, the passivation of hBN has been studied for small areas, mainly because of its small sizes. Here, we report the passivation characteristics of wafer-scale, few monolayers thick, hBN grown by metalorganic chemical vapor deposition. Using a recently reported ITO/i-InP/p+-InP solar cell structure, we show a significant improvement in solar cell performance utilizing a few monolayers of hBN as the passivation layer. Interface defect density (at the hBN/i-InP) calculated using C–V measurement was 2 × 1012 eV−1cm−2 and was found comparable to several previously reported passivation layers. Thus, hBN may, in the future, be a possible candidate to achieve high-quality passivation. hBN-based passivation layers can mainly be useful in cases where the growth of lattice-matched passivation layers is complicated, as in the case of thin-film vapor–liquid–solid and close-spaced vapor transport-based III–V semiconductor growth techniques.
format	article
author	Vidur Raj Dipankar Chugh Lachlan E. Black M. M. Shehata Li Li Felipe Kremer Daniel H. Macdonald Hark Hoe Tan Chennupati Jagadish
author_facet	Vidur Raj Dipankar Chugh Lachlan E. Black M. M. Shehata Li Li Felipe Kremer Daniel H. Macdonald Hark Hoe Tan Chennupati Jagadish
author_sort	Vidur Raj
title	Passivation of InP solar cells using large area hexagonal-BN layers
title_short	Passivation of InP solar cells using large area hexagonal-BN layers
title_full	Passivation of InP solar cells using large area hexagonal-BN layers
title_fullStr	Passivation of InP solar cells using large area hexagonal-BN layers
title_full_unstemmed	Passivation of InP solar cells using large area hexagonal-BN layers
title_sort	passivation of inp solar cells using large area hexagonal-bn layers
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/0a666fcfc99c436eaec78a2b7de54ec6
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Passivation of InP solar cells using large area hexagonal-BN layers

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