Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films

Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous films, excited by a monochromatic light pulse with long-wavelength of 0.63 mm was investigated. The relaxation of the photocurrent has been recorded in the wide time interval (from 0.05 up t...

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Autores principales: Iovu, Mihail, Colomeico, Eduard, Vasiliev, Ion, Harea, Diana
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
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Acceso en línea:https://doaj.org/article/0a773be9176d4e1686700abbc9e355ae
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spelling oai:doaj.org-article:0a773be9176d4e1686700abbc9e355ae2021-11-21T12:12:15ZOptical bias effect on transient photocurrent in amorphous As2Se3: Sn films 2537-63651810-648Xhttps://doaj.org/article/0a773be9176d4e1686700abbc9e355ae2005-11-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3261https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous films, excited by a monochromatic light pulse with long-wavelength of 0.63 mm was investigated. The relaxation of the photocurrent has been recorded in the wide time interval (from 0.05 up to 25 s) and was determined by capture on the deep acceptor-like traps. In a non-doped sample of a-As2Se3 the relaxation of the photocurrent weakly depends on a level of optical bias. For the samples with tin impurity, even the low levels of optical bias result in sharp reduction of the photocurrent. The experimental results are discussed in frame of the model of recombination controlled by capture on deep states.Iovu, MihailColomeico, EduardVasiliev, IonHarea, DianaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 3, Pp 332-341 (2005)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Iovu, Mihail
Colomeico, Eduard
Vasiliev, Ion
Harea, Diana
Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
description Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous films, excited by a monochromatic light pulse with long-wavelength of 0.63 mm was investigated. The relaxation of the photocurrent has been recorded in the wide time interval (from 0.05 up to 25 s) and was determined by capture on the deep acceptor-like traps. In a non-doped sample of a-As2Se3 the relaxation of the photocurrent weakly depends on a level of optical bias. For the samples with tin impurity, even the low levels of optical bias result in sharp reduction of the photocurrent. The experimental results are discussed in frame of the model of recombination controlled by capture on deep states.
format article
author Iovu, Mihail
Colomeico, Eduard
Vasiliev, Ion
Harea, Diana
author_facet Iovu, Mihail
Colomeico, Eduard
Vasiliev, Ion
Harea, Diana
author_sort Iovu, Mihail
title Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
title_short Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
title_full Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
title_fullStr Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
title_full_unstemmed Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
title_sort optical bias effect on transient photocurrent in amorphous as2se3: sn films
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2005
url https://doaj.org/article/0a773be9176d4e1686700abbc9e355ae
work_keys_str_mv AT iovumihail opticalbiaseffectontransientphotocurrentinamorphousas2se3snfilms
AT colomeicoeduard opticalbiaseffectontransientphotocurrentinamorphousas2se3snfilms
AT vasilievion opticalbiaseffectontransientphotocurrentinamorphousas2se3snfilms
AT hareadiana opticalbiaseffectontransientphotocurrentinamorphousas2se3snfilms
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