Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Abstract Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and spectroscopic ellipsometry analyses...

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Autores principales:	G. Antoun, T. Tillocher, P. Lefaucheux, J. Faguet, K. Maekawa, R. Dussart
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/0a7f4f228c87483582d3a8e6f0585dd8
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spelling	oai:doaj.org-article:0a7f4f228c87483582d3a8e6f0585dd82021-12-02T15:23:10ZMechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption10.1038/s41598-020-79560-z2045-2322https://doaj.org/article/0a7f4f228c87483582d3a8e6f0585dd82021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-79560-zhttps://doaj.org/toc/2045-2322Abstract Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and spectroscopic ellipsometry analyses to evaluate the residence time of physisorbed C4F8 molecules versus temperature and pressure on SiO2 surface. QMS monitoring of the SiF4 etching by-product also enabled to follow the self-limiting etching behavior. Finally, a SiO2 cryo-ALE process was proposed at a temperature of − 90 °C resulting in a very linear etch over 150 cycles and an Etch amount Per Cycle as low as 0.13 nm/cycle.G. AntounT. TillocherP. LefaucheuxJ. FaguetK. MaekawaR. DussartNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q G. Antoun T. Tillocher P. Lefaucheux J. Faguet K. Maekawa R. Dussart Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
description	Abstract Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and spectroscopic ellipsometry analyses to evaluate the residence time of physisorbed C4F8 molecules versus temperature and pressure on SiO2 surface. QMS monitoring of the SiF4 etching by-product also enabled to follow the self-limiting etching behavior. Finally, a SiO2 cryo-ALE process was proposed at a temperature of − 90 °C resulting in a very linear etch over 150 cycles and an Etch amount Per Cycle as low as 0.13 nm/cycle.
format	article
author	G. Antoun T. Tillocher P. Lefaucheux J. Faguet K. Maekawa R. Dussart
author_facet	G. Antoun T. Tillocher P. Lefaucheux J. Faguet K. Maekawa R. Dussart
author_sort	G. Antoun
title	Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
title_short	Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
title_full	Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
title_fullStr	Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
title_full_unstemmed	Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
title_sort	mechanism understanding in cryo atomic layer etching of sio2 based upon c4f8 physisorption
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/0a7f4f228c87483582d3a8e6f0585dd8
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Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

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