Carrier multiplication in van der Waals layered transition metal dichalcogenides

During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.

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Autores principales: Ji-Hee Kim, Matthew R. Bergren, Jin Cheol Park, Subash Adhikari, Michael Lorke, Thomas Frauenheim, Duk-Hyun Choe, Beom Kim, Hyunyong Choi, Tom Gregorkiewicz, Young Hee Lee
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/0aa0200a81034578b05965a772f1e877
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Sumario:During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.