Carrier multiplication in van der Waals layered transition metal dichalcogenides

During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.

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Autores principales:	Ji-Hee Kim, Matthew R. Bergren, Jin Cheol Park, Subash Adhikari, Michael Lorke, Thomas Frauenheim, Duk-Hyun Choe, Beom Kim, Hyunyong Choi, Tom Gregorkiewicz, Young Hee Lee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/0aa0200a81034578b05965a772f1e877
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spelling	oai:doaj.org-article:0aa0200a81034578b05965a772f1e8772021-12-02T16:57:10ZCarrier multiplication in van der Waals layered transition metal dichalcogenides10.1038/s41467-019-13325-92041-1723https://doaj.org/article/0aa0200a81034578b05965a772f1e8772019-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-13325-9https://doaj.org/toc/2041-1723During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.Ji-Hee KimMatthew R. BergrenJin Cheol ParkSubash AdhikariMichael LorkeThomas FrauenheimDuk-Hyun ChoeBeom KimHyunyong ChoiTom GregorkiewiczYoung Hee LeeNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Ji-Hee Kim Matthew R. Bergren Jin Cheol Park Subash Adhikari Michael Lorke Thomas Frauenheim Duk-Hyun Choe Beom Kim Hyunyong Choi Tom Gregorkiewicz Young Hee Lee Carrier multiplication in van der Waals layered transition metal dichalcogenides
description	During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.
format	article
author	Ji-Hee Kim Matthew R. Bergren Jin Cheol Park Subash Adhikari Michael Lorke Thomas Frauenheim Duk-Hyun Choe Beom Kim Hyunyong Choi Tom Gregorkiewicz Young Hee Lee
author_facet	Ji-Hee Kim Matthew R. Bergren Jin Cheol Park Subash Adhikari Michael Lorke Thomas Frauenheim Duk-Hyun Choe Beom Kim Hyunyong Choi Tom Gregorkiewicz Young Hee Lee
author_sort	Ji-Hee Kim
title	Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_short	Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_full	Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_fullStr	Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_full_unstemmed	Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_sort	carrier multiplication in van der waals layered transition metal dichalcogenides
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/0aa0200a81034578b05965a772f1e877
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Carrier multiplication in van der Waals layered transition metal dichalcogenides

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