Carrier multiplication in van der Waals layered transition metal dichalcogenides

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Carrier multiplication in van der Waals layered transition metal dichalcogenides

During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.

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Detalles Bibliográficos
Autores principales:	Ji-Hee Kim, Matthew R. Bergren, Jin Cheol Park, Subash Adhikari, Michael Lorke, Thomas Frauenheim, Duk-Hyun Choe, Beom Kim, Hyunyong Choi, Tom Gregorkiewicz, Young Hee Lee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/0aa0200a81034578b05965a772f1e877
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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