A two-dimensional electron–hole system under conditions of fractional quantum hall effects

It has been shown that the Chern–Simons (C–S) gauge field created by quantum point vortices under conditions of fractional quantum Hall effects (FQHEs) leads to the formation of composite electrons and holes with equal integer numbers of quantum point vortices attached to each particle. The coherent...

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Autores principales: Moscalenco, Sveatoslav, Moscalenco, Vsevolod
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2018
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Acceso en línea:https://doaj.org/article/0b1bee9c16144f43b2cd3eb28b6c3183
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spelling oai:doaj.org-article:0b1bee9c16144f43b2cd3eb28b6c31832021-11-21T11:56:29ZA two-dimensional electron–hole system under conditions of fractional quantum hall effects537.311.3222537-63651810-648Xhttps://doaj.org/article/0b1bee9c16144f43b2cd3eb28b6c31832018-07-01T00:00:00Zhttps://mjps.nanotech.md/archive/2018/article/71434https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365It has been shown that the Chern–Simons (C–S) gauge field created by quantum point vortices under conditions of fractional quantum Hall effects (FQHEs) leads to the formation of composite electrons and holes with equal integer numbers of quantum point vortices attached to each particle. The coherent superposition of the velocities of these vortices leads to the formation of the C–S vector potential, which depends on the difference between density operators of the electrons and of the holes. The C–S vector potential generates an effective magnetic field acting on the particles in addition to the external magnetic field. In the mean field approximation, when the average densities of electrons and holes coincide, the effective C–S magnetic and electric fields vanish and the Landau quantization of the composite particles with the bare electron and hole effective masses take place only under the action of the external magnetic field.Moscalenco, SveatoslavMoscalenco, VsevolodD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 17, Iss 1-2, Pp 41-51 (2018)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Moscalenco, Sveatoslav
Moscalenco, Vsevolod
A two-dimensional electron–hole system under conditions of fractional quantum hall effects
description It has been shown that the Chern–Simons (C–S) gauge field created by quantum point vortices under conditions of fractional quantum Hall effects (FQHEs) leads to the formation of composite electrons and holes with equal integer numbers of quantum point vortices attached to each particle. The coherent superposition of the velocities of these vortices leads to the formation of the C–S vector potential, which depends on the difference between density operators of the electrons and of the holes. The C–S vector potential generates an effective magnetic field acting on the particles in addition to the external magnetic field. In the mean field approximation, when the average densities of electrons and holes coincide, the effective C–S magnetic and electric fields vanish and the Landau quantization of the composite particles with the bare electron and hole effective masses take place only under the action of the external magnetic field.
format article
author Moscalenco, Sveatoslav
Moscalenco, Vsevolod
author_facet Moscalenco, Sveatoslav
Moscalenco, Vsevolod
author_sort Moscalenco, Sveatoslav
title A two-dimensional electron–hole system under conditions of fractional quantum hall effects
title_short A two-dimensional electron–hole system under conditions of fractional quantum hall effects
title_full A two-dimensional electron–hole system under conditions of fractional quantum hall effects
title_fullStr A two-dimensional electron–hole system under conditions of fractional quantum hall effects
title_full_unstemmed A two-dimensional electron–hole system under conditions of fractional quantum hall effects
title_sort two-dimensional electron–hole system under conditions of fractional quantum hall effects
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2018
url https://doaj.org/article/0b1bee9c16144f43b2cd3eb28b6c3183
work_keys_str_mv AT moscalencosveatoslav atwodimensionalelectronholesystemunderconditionsoffractionalquantumhalleffects
AT moscalencovsevolod atwodimensionalelectronholesystemunderconditionsoffractionalquantumhalleffects
AT moscalencosveatoslav twodimensionalelectronholesystemunderconditionsoffractionalquantumhalleffects
AT moscalencovsevolod twodimensionalelectronholesystemunderconditionsoffractionalquantumhalleffects
_version_ 1718419345143496704