Helium incorporation induced direct-gap silicides

Abstract The search of direct-gap Si-based semiconductors is of great interest due to the potential application in many technologically relevant fields. This work examines the incorporation of He as a possible route to form a direct band gap in Si. Structure predictions and first-principles calculat...

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Autores principales: Shicong Ding, Jingming Shi, Jiahao Xie, Wenwen Cui, Pan Zhang, Kang Yang, Jian Hao, Lijun Zhang, Yinwei Li
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/0b6fea9a18ad4c769b42bf3c9ded63ae
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