Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications

This paper revisits the master-equation-based approach to physical parameters to characterize transport in three-dimensional and low-dimensional few-electron systems. Advanced expressions of the electron density are theoretically derived at equilibrium for a system having traps. It is revealed that...

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Autor principal:	Yasuhisa Omura
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/0b7d524f3c7540aa9ba0275f86bb4b5d
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spelling	oai:doaj.org-article:0b7d524f3c7540aa9ba0275f86bb4b5d2021-12-01T18:52:06ZMaster-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications2158-322610.1063/5.0064633https://doaj.org/article/0b7d524f3c7540aa9ba0275f86bb4b5d2021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0064633https://doaj.org/toc/2158-3226This paper revisits the master-equation-based approach to physical parameters to characterize transport in three-dimensional and low-dimensional few-electron systems. Advanced expressions of the electron density are theoretically derived at equilibrium for a system having traps. It is revealed that electron density at equilibrium is slightly higher than that without any interface traps as a result of the influence of dynamic trapping/detrapping processes. The capture time constant of electrons applicable to practical systems having traps, such as silicon-related materials, is also theoretically derived. The theoretical model is examined by numerical calculations and experimental results. In wire-type metal–oxide–semiconductor devices, the capture-time constant model roughly reproduces its inverse-temperature dependence. The effective activation energy of the capture time constant is not significantly influenced by that of the emission time constant. In the conductive filaments of silicon oxide film created by electrical stress, the capture-time constant model basically reproduces its inverse-temperature dependence. The effective activation energy of the capture time constant is not significantly influenced by that of the emission time constant but is influenced by the cross-sectional area of the filament and the electron density in the filament. The capture-time constant model semi-quantitatively reproduces the experimentally observed bias dependence of the silicon oxide film. Numerical calculation results suggest that the carrier transit time assumed in the model depends on the physical properties of the materials used. Given the goal of this study, the theoretical approach basically produces successful results.Yasuhisa OmuraAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115123-115123-16 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Yasuhisa Omura Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications
description	This paper revisits the master-equation-based approach to physical parameters to characterize transport in three-dimensional and low-dimensional few-electron systems. Advanced expressions of the electron density are theoretically derived at equilibrium for a system having traps. It is revealed that electron density at equilibrium is slightly higher than that without any interface traps as a result of the influence of dynamic trapping/detrapping processes. The capture time constant of electrons applicable to practical systems having traps, such as silicon-related materials, is also theoretically derived. The theoretical model is examined by numerical calculations and experimental results. In wire-type metal–oxide–semiconductor devices, the capture-time constant model roughly reproduces its inverse-temperature dependence. The effective activation energy of the capture time constant is not significantly influenced by that of the emission time constant. In the conductive filaments of silicon oxide film created by electrical stress, the capture-time constant model basically reproduces its inverse-temperature dependence. The effective activation energy of the capture time constant is not significantly influenced by that of the emission time constant but is influenced by the cross-sectional area of the filament and the electron density in the filament. The capture-time constant model semi-quantitatively reproduces the experimentally observed bias dependence of the silicon oxide film. Numerical calculation results suggest that the carrier transit time assumed in the model depends on the physical properties of the materials used. Given the goal of this study, the theoretical approach basically produces successful results.
format	article
author	Yasuhisa Omura
author_facet	Yasuhisa Omura
author_sort	Yasuhisa Omura
title	Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications
title_short	Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications
title_full	Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications
title_fullStr	Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications
title_full_unstemmed	Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications
title_sort	master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/0b7d524f3c7540aa9ba0275f86bb4b5d
work_keys_str_mv	AT yasuhisaomura masterequationbasedapproachtostochasticprocessesinfewelectronsystemsandadvancedconsiderationsforpracticalapplications
_version_	1718404674185330688

Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications

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