Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics
Two-dimensional materials: Repairing atomic defects via solution processing Defects can heavily influence the electrical transport properties of three-dimensional materials. But their impact becomes even more pronounced in low-dimensional systems. Fengqi Song and colleagues use a combination of calc...
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Nature Portfolio
2017
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oai:doaj.org-article:0b9477108a9b4623b98834b9e01c29082021-12-02T14:18:31ZRepairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics10.1038/s41535-017-0018-72397-4648https://doaj.org/article/0b9477108a9b4623b98834b9e01c29082017-03-01T00:00:00Zhttps://doi.org/10.1038/s41535-017-0018-7https://doaj.org/toc/2397-4648Two-dimensional materials: Repairing atomic defects via solution processing Defects can heavily influence the electrical transport properties of three-dimensional materials. But their impact becomes even more pronounced in low-dimensional systems. Fengqi Song and colleagues use a combination of calculations and experiments to show that a simple drop of a chemical solution can repair the selenium vacancies in field-effect transistors made from single layer molybdenum diselenide. By reducing the number of vacancies, which localize the electronic transport, the authors increased the carrier mobilities to nearly the intrinsic value by 2–3 orders of magnitude. The defect dynamics is visualized by the high resolution electron microscopy and multislice simulations. Such an approach could provide a route for enabling practical devices to be made from these relatively fragile materials.Yuze MengChongyi LingRun XinPeng WangYou SongHaijun BuSi GaoXuefeng WangFengqi SongJinlan WangXinran WangBaigeng WangGuanghou WangNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Atomic physics. Constitution and properties of matterQC170-197ENnpj Quantum Materials, Vol 2, Iss 1, Pp 1-5 (2017) |
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DOAJ |
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DOAJ |
| language |
EN |
| topic |
Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 |
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Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 Yuze Meng Chongyi Ling Run Xin Peng Wang You Song Haijun Bu Si Gao Xuefeng Wang Fengqi Song Jinlan Wang Xinran Wang Baigeng Wang Guanghou Wang Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics |
| description |
Two-dimensional materials: Repairing atomic defects via solution processing Defects can heavily influence the electrical transport properties of three-dimensional materials. But their impact becomes even more pronounced in low-dimensional systems. Fengqi Song and colleagues use a combination of calculations and experiments to show that a simple drop of a chemical solution can repair the selenium vacancies in field-effect transistors made from single layer molybdenum diselenide. By reducing the number of vacancies, which localize the electronic transport, the authors increased the carrier mobilities to nearly the intrinsic value by 2–3 orders of magnitude. The defect dynamics is visualized by the high resolution electron microscopy and multislice simulations. Such an approach could provide a route for enabling practical devices to be made from these relatively fragile materials. |
| format |
article |
| author |
Yuze Meng Chongyi Ling Run Xin Peng Wang You Song Haijun Bu Si Gao Xuefeng Wang Fengqi Song Jinlan Wang Xinran Wang Baigeng Wang Guanghou Wang |
| author_facet |
Yuze Meng Chongyi Ling Run Xin Peng Wang You Song Haijun Bu Si Gao Xuefeng Wang Fengqi Song Jinlan Wang Xinran Wang Baigeng Wang Guanghou Wang |
| author_sort |
Yuze Meng |
| title |
Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics |
| title_short |
Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics |
| title_full |
Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics |
| title_fullStr |
Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics |
| title_full_unstemmed |
Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics |
| title_sort |
repairing atomic vacancies in single-layer mose2 field-effect transistor and its defect dynamics |
| publisher |
Nature Portfolio |
| publishDate |
2017 |
| url |
https://doaj.org/article/0b9477108a9b4623b98834b9e01c2908 |
| work_keys_str_mv |
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| _version_ |
1718391589042126848 |