Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics
Two-dimensional materials: Repairing atomic defects via solution processing Defects can heavily influence the electrical transport properties of three-dimensional materials. But their impact becomes even more pronounced in low-dimensional systems. Fengqi Song and colleagues use a combination of calc...
Guardado en:
Autores principales: | Yuze Meng, Chongyi Ling, Run Xin, Peng Wang, You Song, Haijun Bu, Si Gao, Xuefeng Wang, Fengqi Song, Jinlan Wang, Xinran Wang, Baigeng Wang, Guanghou Wang |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/0b9477108a9b4623b98834b9e01c2908 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Oxygen vacancy-induced topological nanodomains in ultrathin ferroelectric films
por: Wei Peng, et al.
Publicado: (2021) -
Vacancy defect control of colossal thermopower in FeSb2
por: Qianheng Du, et al.
Publicado: (2021) -
Giant linear magnetoresistance in half-metallic Sr2CrMoO6 thin films
por: Zhao-Cai Wang, et al.
Publicado: (2021) -
Spin splitting and electric field modulated electron-hole pockets in antimonene nanoribbons
por: Yan Song, et al.
Publicado: (2017) -
Quantum spin liquid and cluster Mott insulator phases in the Mo3O8 magnets
por: S. A. Nikolaev, et al.
Publicado: (2021)