Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Abstract We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. The multi-bands emission of the LEDs covers nearly t...

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Autores principales: Y. Robin, S. Y. Bae, T. V. Shubina, M. Pristovsek, E. A. Evropeitsev, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, A. A. Toropov, V. N. Jmerik, M. Kushimoto, S. Nitta, S. V. Ivanov, H. Amano
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Publicado: Nature Portfolio 2018
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spelling oai:doaj.org-article:0bf6213e55be44faa678ee6db49bf8fb2021-12-02T16:08:24ZInsight into the performance of multi-color InGaN/GaN nanorod light emitting diodes10.1038/s41598-018-25473-x2045-2322https://doaj.org/article/0bf6213e55be44faa678ee6db49bf8fb2018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25473-xhttps://doaj.org/toc/2045-2322Abstract We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. The multi-bands emission of the LEDs covers nearly the whole visible region, including UV, blue, green, and orange ranges. The intensity of each emission is strongly dependent on the current density, however the LEDs demonstrate a rather low color saturation. Based on transmission electron microscopy data and comparing them with electroluminescence and photoluminescence spectra measured at different excitation powers and temperatures, we could identify the spatial origination of each of the emission bands. We show that their wavelengths and intensities are governed by different thicknesses of the QWs grown on different crystal facets of the NRs as well as corresponding polarization-induced electric fields. Also the InGaN incorporation strongly varies along the NRs, increasing at their tips and corners, which provides the red shift of emission. With increasing the current, the different QW regions are activated successively from the NR tips to the side-walls, resulting in different LED colors. Our findings can be used as a guideline to design effectively emitting multi-color NR-LEDs.Y. RobinS. Y. BaeT. V. ShubinaM. PristovsekE. A. EvropeitsevD. A. KirilenkoV. Yu. DavydovA. N. SmirnovA. A. ToropovV. N. JmerikM. KushimotoS. NittaS. V. IvanovH. AmanoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Y. Robin
S. Y. Bae
T. V. Shubina
M. Pristovsek
E. A. Evropeitsev
D. A. Kirilenko
V. Yu. Davydov
A. N. Smirnov
A. A. Toropov
V. N. Jmerik
M. Kushimoto
S. Nitta
S. V. Ivanov
H. Amano
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
description Abstract We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. The multi-bands emission of the LEDs covers nearly the whole visible region, including UV, blue, green, and orange ranges. The intensity of each emission is strongly dependent on the current density, however the LEDs demonstrate a rather low color saturation. Based on transmission electron microscopy data and comparing them with electroluminescence and photoluminescence spectra measured at different excitation powers and temperatures, we could identify the spatial origination of each of the emission bands. We show that their wavelengths and intensities are governed by different thicknesses of the QWs grown on different crystal facets of the NRs as well as corresponding polarization-induced electric fields. Also the InGaN incorporation strongly varies along the NRs, increasing at their tips and corners, which provides the red shift of emission. With increasing the current, the different QW regions are activated successively from the NR tips to the side-walls, resulting in different LED colors. Our findings can be used as a guideline to design effectively emitting multi-color NR-LEDs.
format article
author Y. Robin
S. Y. Bae
T. V. Shubina
M. Pristovsek
E. A. Evropeitsev
D. A. Kirilenko
V. Yu. Davydov
A. N. Smirnov
A. A. Toropov
V. N. Jmerik
M. Kushimoto
S. Nitta
S. V. Ivanov
H. Amano
author_facet Y. Robin
S. Y. Bae
T. V. Shubina
M. Pristovsek
E. A. Evropeitsev
D. A. Kirilenko
V. Yu. Davydov
A. N. Smirnov
A. A. Toropov
V. N. Jmerik
M. Kushimoto
S. Nitta
S. V. Ivanov
H. Amano
author_sort Y. Robin
title Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
title_short Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
title_full Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
title_fullStr Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
title_full_unstemmed Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
title_sort insight into the performance of multi-color ingan/gan nanorod light emitting diodes
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/0bf6213e55be44faa678ee6db49bf8fb
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